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參數(shù)資料
| 型號： | NTMFS4120N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 31A, Single N Channel, SO8 Flat Lead(30V, 31A，功率MOSFET) |
| 中文描述： | 功率MOSFET 30V的，第31A條，單個N頻道，采用SO8扁平無鉛（30V的，第31A條，功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 74K |
| 代理商： | NTMFS4120N |
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 1
1
Publication Order Number:
NTMFS4120N/D
NTMFS4120N
Power MOSFET
30 V, 31 A, Single NChannel,
SO8 Flat Lead
Features
Low R
DS(on)
Optimized Gate Charge
Low Inductance SO8 Package
These are PbFree Devices*
Applications
Notebooks, Graphics Cards
DCDC Converters
Synchronous Rectification
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
20
V
Continuous Drain Current
(Note 1 )
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
18
A
13
t
10 s
31
Power Dissipation (Note 1)
Steady
State
T
A
= 25
°
C
P
D
2.2
W
t
10 s
6.9
Continuous Drain Current
(Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
t
p
= 10 s
I
D
11
A
8.0
Power Dissipation (Note 2)
P
D
I
DM
0.9
W
Pulsed Drain Current
94
A
°
C
Operating Junction and Storage Temperature
T
J
, T
stg
55 to
150
Source Current (Body Diode)
I
S
7.0
A
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 30 V, V
GS
= 10 V, I
PK
= 30 A, L = 1 mH,
R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
E
AS
450
mJ
T
L
260
°
C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
JunctiontoAmbient Steady State (Note 1)
R
JA
R
JA
R
JA
55.8
°
C/W
JunctiontoAmbient t
10 s (Note 1)
18
JunctiontoAmbient Steady State (Note 2)
139.1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 1.0 in sq).
G
D
S
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4120NT1G
SO8 FL
(PbFree)
1500 Tape & Reel
SO8 FLAT LEAD
CASE 488AA
STYLE 1
4120N = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
1
MARKING
DIAGRAM
D
4120N
AYWW
S
S
S
G
D
D
D
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
NTMFS4120NT3G
SO8 FL
(PbFree)
5000 Tape & Reel
30 V
4.2 m @ 4.5 V
3.5 m @ 10 V
R
DS(on)
TYP
31 A
I
D
MAX
(Note 1)
V
(BR)DSS
*For additional information on our PbFree strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTMFS4120NT1G | 功能描述:MOSFET 30V 31A Single N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4120NT3G | 功能描述:MOSFET 30V 31A Single N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4121N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead |
| NTMFS4121NT1G | 功能描述:MOSFET NFET 24A 30V 4.0MOH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4121NT3G | 功能描述:MOSFET NFET 24A 30V 4.0MOH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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