參數(shù)資料
型號： NTMFS4701N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁數(shù)： 1/6頁
文件大?。?/td> 138K
代理商： NTMFS4701N
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTMFS4701N/D
NTMFS4701N
Power MOSFET
30 V, 20 A, Single N
Channel,
SOIC
8 Flat Lead Package
Features
Thermally and Electrically Enhanced Packaging Compatible with
Standard SOIC
8
New Package Provides Capability of Inspection and Probe After
Board Mounting
Ultra Low R
DS(on)
(at 4.5 V
GS
), Low Gate Resistance and Low Q
G
Optimized for High Side Control Applications
High Speed Switching Capability
These are Pb
Free Devices
Applications
Notebook Computer VCORE Applications
Network Applications
DC
DC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
30
V
Gate
to
Source Voltage
V
GS
20
V
Continuous Drain Current
(Note 1 )
Steady
State
T
A
= 25
°
C
T
A
= 70
°
C
I
D
12.3
A
9.8
t
10 s
T
A
= 25
°
C
I
D
20
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
2.3
W
t
10 s
T
A
= 25
°
C
T
A
= 25
°
C
T
A
= 70
°
C
P
D
6.0
Continuous Drain Current
(Note 2)
Steady
State
I
D
7.7
A
6.2
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.9
W
Pulsed Drain Current
t
p
= 10 s
I
DM
60
A
Operating and Storage Temperature
T
J
, T
stg
55 to
150
°
C
Source Current (Body Diode)
I
S
6.0
A
Single Pulse Drain
to
Source Avalanche Energy
(V
= 25 V, V
GS
= 10 V, I
PK
= 7.5 A,
L = 10 mH, R
G
E
AS
280
mJ
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in sq. pad size
(Cu area 1.127 in sq. [1 oz} including traces).
2. Surface
mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq.).
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4701NT1G SOIC
8 FL
(Pb
Free)
1500 / Tape & Reel
SOIC
8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
4701N
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb
Free Package
4701N
AYWW
S
S
S
G
N
Channel
D
S
G
30 V
8.0 m @ 4.5 V
6.0 m @ 10 V
R
DS(on)
Typ
20 A
I
D
Max
V
(BR)DSS
D
D
D
D
NTMFS4701NT3G
5000 / Tape & Reel
SOIC
8 FL
(Pb
Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTMFS4701NT1G 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4701NT3G 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4707N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:+12 V Telecom Power Conversion Solutions
NTMFS4707NT1G 功能描述:MOSFET 30V 17A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4707NT3G 功能描述:MOSFET 30V 17A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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