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參數(shù)資料
| 型號： | NTMFS4108N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 35 A(30V, 35A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，35甲（30V的，35A條，功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 69K |
| 代理商： | NTMFS4108N |
Semiconductor Components Industries, LLC, 2007
January, 2007 Rev. 4
1
Publication Order Number:
NTMFS4108N/D
NTMFS4108N
Power MOSFET
30 V, 35 A, Single NChannel,
SO8 Flat Lead Package
Features
Thermally and Electrically Enhanced Packaging Compatible with
Standard SO8 Package Footprint
New Package Provides Capability of Inspection and Probe After
Board Mounting
Ultra Low R
DS(on)
(at 4.5 V
GS
), Low Gate Resistance and Low Q
G
Optimized for Low Side Synchronous Applications
High Speed Switching Capability
Applications
Notebook Computer Vcore Applications
Network Applications
DCDC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
22
A
16
t
10 s
35
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
2.4
W
t
10 s
6.25
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
I
D
13.5
A
10
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.91
W
Power Dissipation
R
JC
(Note 1)
Pulsed Drain Current
T
C
= 25
°
C
P
D
100
W
t
p
= 10 s
I
DM
203
A
°
C
Operating Junction and Storage Temperature
T
J
, T
stg
55 to
150
Continuous Source Current (Body Diode)
I
S
6.0
A
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V, I
PK
= 30 A,
L = 1 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
E
AS
450
mJ
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1
″
sq. pad size
(Cu area = 1.127
″
sq. [1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412
″
sq.).
http://onsemi.com
30 V
2.7 m @ 4.5 V
1.8 m @ 10 V
R
DS(on)
TYP
35 A
I
D
MAX
V
(BR)DSS
G
D
S
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4108NT1G
SO8 FL
(PbFree)
1500 Tape / Reel
SO8 FLAT LEAD
CASE 488AA
STYLE 1
4108N
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
1
MARKING
DIAGRAM
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
4108N
AYWW
S
S
S
G
D
D
NTMFS4108NT3G
SO8 FL
(PbFree)
5000 Tape / Reel
D
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTMFS4108NT1G | 功能描述:MOSFET NFET SO8FL 40A 30V 1.8mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4108NT3G | 功能描述:MOSFET NFET SO8FL 40A 30V 1.8mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4119N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead |
| NTMFS4119NT1G | 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4119NT3G | 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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