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參數(shù)資料
| 型號(hào)： | NTMD6P02R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET 6 Amps, 20 Volts P–Channel SO–8, Dual(6A，20V，雙P溝道，SO-8封裝的功率MOSFET) |
| 中文描述： | 4800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SOIC-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 106K |
| 代理商： | NTMD6P02R2 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
NTMD6P02R2/D
NTMD6P02R2
Preferred Device
Power MOSFET
6 Amps, 20 Volts
P–Channel SO–8, Dual
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SO–8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SO–8 Mounting Information Provided
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
–20
V
Gate–to–Source Voltage – Continuous
12
V
Thermal Resistance –
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ TA = 25
°
C
Continuous Drain Current @ TA = 25
°
C
Continuous Drain Current @ TA = 70
°
C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
R
θ
JA
PD
ID
ID
PD
ID
IDM
62.5
2.0
–7.8
–5.7
0.5
–3.89
–40
°
C/W
W
A
A
W
A
A
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ TA = 25
°
C
Continuous Drain Current @ TA = 25
°
C
Continuous Drain Current @ TA = 70
°
C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
R
θ
JA
PD
ID
ID
PD
ID
IDM
98
1.28
–6.2
–4.6
0.3
–3.01
–35
°
C/W
W
A
A
W
A
A
Thermal Resistance –
Junction–to–Ambient (Note 3.)
Total Power Dissipation @ TA = 25
°
C
Continuous Drain Current @ TA = 25
°
C
Continuous Drain Current @ TA = 70
°
C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
R
θ
JA
PD
ID
ID
PD
ID
IDM
166
0.75
–4.8
–3.5
0.2
–2.48
–30
°
C/W
W
A
A
W
A
A
1. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz. Cu 0.06
″
thick single
sided), t = 10 seconds.
2. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz. Cu 0.06
″
thick single
sided), t = steady state.
3. Minimum FR–4 or G–10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
1
8
6 AMPERES
20 VOLTS
RDS(on) = 33 m
Device
Package
Shipping
ORDERING INFORMATION
NTMD6P02R2
SO–8
2500 Tape & Reel
SO–8, Dual
CASE 751
STYLE 11
LYWW
MARKING
DIAGRAM
E6P02
L
Y
WW
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
http://onsemi.com
P–Channel
D
S
G
Preferred
devices are recommended choices for future use
and best overall value.
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