- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363712 > NTMC1300R2 (ON SEMICONDUCTOR) Power MOSFET 3 Amps, 30 Volts(3A,30Vde 的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTMC1300R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts(3A,30Vde 的功率MOSFET) |
| 中文描述： | 2.2 A, 30 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SO-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | NTMC1300R2 |
Semiconductor Components Industries, LLC, 2002
December, 2002 - Rev. 0
1
Publication Order Number:
NTMC1300R2/D
NTMC1300R2
Power MOSFET
3 Amps, 30 Volts
Complementary SO-8 Dual
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Miniature SO-8 Surface Mount Package
Applications
DC-DC Converters
Power Management in Portable and Battery Powered Products, i.e.:
Computers, Printers, Cellular and Cordless Phones
Low Voltage Motor Controls in Mass Storage Products, i.e.: Disk
Drives, Tape Drives
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage - Continuous
V
GS
±
20
V
Drain Current - Continuous (Note 1)
N-Channel
P-Channel
I
D
2.2
1.8
Adc
Drain Current - Continuous (Note 2)
N-Channel
P-Channel
I
D
2.8
2.3
Adc
Drain Current - Continuous (Note 3)
N-Channel
P-Channel
I
D
3.6
3.0
Adc
Drain Current - Pulsed
N-Channel
P-Channel
I
DM
8.5
7.0
Apk
Total Power Dissipation @ T
A
= 25
°
C
(Note 3)
P
D
2.0
W
Operating and Storage
Temperature Range
T
J
, T
stg
-65 to
150
°
C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25
°
C
(V
DD
= 20 Vdc, V
GS
= 10 Vdc,
I
L
= 2.45 Apk, L = 25 mH, RG = 25 )
E
AS
75
mJ
Thermal Resistance
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Junction-to-Ambient (Note 3)
R
JA
178.5
106
62.5
°
C/W
Maximum Lead Temperature for
Soldering Purposes for 10 Seconds
T
L
260
°
C
1. When surface mounted to an FR-4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
), Steady State.
2. When surface mounted to an FR- 4 board using 1
″
pad size, (Cu Area
0.412 in
2
), Steady State.
3. When surface mounted to an FR- 4 board using 1
″
pad size, (Cu Area
0.412 in
2
), T
≤
10 Seconds.
EC1300
LYWW
Source-1
1
2
3
4
8
7
6
5
(Top View)
Gate-1
Source-2
Gate-2
Drain-1
Drain-1
Drain-2
Drain-2
Device
Package
Shipping
ORDERING INFORMATION
NTMC1300R2
SO-8
2500/Tape & Reel
3 AMPERES, 30 VOLTS
73 m @ V
GS
= 10 V (Typ)
(N-Channel)
100 m @ V
GS
= 10 V (Typ)
(P-Channel)
SO-8, Dual
CASE 751
STYLE 11
MARKING
DIAGRAM
EC1300
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
1
8
http://onsemi.com
D2
S2
G2
P-Channel
D1
S1
G1
N-Channel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTMD2P01R2 | Power MOSFET -2.3 Amps, -16 Volts Dual SO–8 Package(-2.3A，-16V，雙通道，SO-8封裝的功率MOSFET) |
| NTMD3N08 | 80 V Power MOSFET(3A,80V功率MOS場效應(yīng)管) |
| NTMD3P03R2 | Power MOSFET -3.05 Amps, -30 Volts Dual P–Channel SO–8(-3.05 A, -30 V，雙P通道,SO-8封裝的功率MOSFET) |
| NTMD4N03R2 | Power MOSFET 4 Amps, 30 Volts(4A, 30V, 功率MOSFET) |
| NTMD6N02R2 | Power MOSFET 6.0 Amps, 20 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NT-MCX-G | 功能描述:RF 連接器 Nut for MCX and MMCX Connectors RoHS:否 制造商:Bomar Interconnect 產(chǎn)品:Connectors 射頻系列:BNC 型式:Jack (Female) 極性: 觸點電鍍:Gold 阻抗: 端接類型:Solder 主體類型:Straight Bulkhead 電纜類型: |
| NTMD2C02R2 | 功能描述:MOSFET 20V 5.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD2C02R2G | 功能描述:MOSFET 20V 5.2A Complementary RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD2C02R2SG | 功能描述:MOSFET COMP20V 2A .043R TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD2P01R2 | 功能描述:MOSFET -16V 2.3A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。