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參數(shù)資料
| 型號(hào)： | NTMD3N08 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 80 V Power MOSFET(3A,80V功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 80 V, 0.185 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | NTMD3N08 |
Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 0
1
Publication Order Number:
NTMD3N08/D
NTMD3N08, NTMD3N08L
Product Preview
80 V Power MOSFET
ON Semiconductor utilizes its latest MOSFET technology process
to manufacture 80 V power MOSFET devices to achieve the lowest
possible on–resistance per silicon area. These 80 V devices are
designed for Power Management solutions in 42 V Automotive
system applications. Typical applications include integrated starter
alternator, electronic power steering, electronic fuel injection,
catalytic converter heaters and other high power applications made
possible via an automotive 42 V bus. ON Semiconductor’s latest
technology offering continues to offer high avalanche energy
capability and low reverse recovery losses.
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown
Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
V(BR)DSS
80
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 80 Vdc, VGS = 0 Vdc)
(VDS = 80 Vdc, VGS = 0 Vdc,
TJ =150
°
C)
IDSS
–
–
–
–
1.0
10
μ
Adc
Gate–Body Leakage Current
(VGS =
±
20
Vdc, VDS = 0 Vdc)
IGSS
–
–
±
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
NTMD3N08
NTMD3N08L
VGS(th)
2.0
1.0
3.0
2.0
4.0
3.0
Vdc
Static Drain–to–Source
On–Resistance
(ID = 1.5 Adc)
NTMD3N08, VGS= 10 V
NTMD3N08L, VGS = 5 V
RDS(on)
–
–
185
200
–
–
m
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
3 AMPERES
3N08 Typ RDS(on) = 185 m
3N08L Typ RDS(on) = 200 m
http://onsemi.com
DUAL SO–8
CASE 751
STYLE 11
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| NTMD3P03R2 | Power MOSFET -3.05 Amps, -30 Volts Dual P–Channel SO–8(-3.05 A, -30 V，雙P通道,SO-8封裝的功率MOSFET) |
| NTMD4N03R2 | Power MOSFET 4 Amps, 30 Volts(4A, 30V, 功率MOSFET) |
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| NTMD6N03R2 | Power MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTMD3N08/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:80 V Power MOSFET |
| NTMD3N08L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 80V V(BR)DSS | SO |
| NTMD3N08LR2 | 功能描述:MOSFET 80V 2.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD3N08LR2G | 制造商:ON Semiconductor 功能描述: |
| NTMD3P03R2 | 功能描述:MOSFET 30V 3.05A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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