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參數(shù)資料
| 型號(hào)： | NTMD2P01R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET -2.3 Amps, -16 Volts Dual SO–8 Package(-2.3A，-16V，雙通道，SO-8封裝的功率MOSFET) |
| 中文描述： | 2.3 A, 16 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 75K |
| 代理商： | NTMD2P01R2 |
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 0
1
Publication Order Number:
NTMD2P01R2/D
NTMD2P01R2
Product Preview
Power MOSFET
-2.3 Amps, -16 Volts
Dual SO–8 Package
Features
High Efficiency Components in a Single SO–8 Package
High Density Power MOSFET with Low R
DS(on)
Logic Level Gate Drive
SO–8 Surface Mount Package,
Mounting Information for SO–8 Package Provided
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Thermal Resistance – Junction–to–Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 4)
Thermal Resistance – Junction–to–Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 4)
Thermal Resistance – Junction–to–Ambient
(Note 3)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 4)
Operating and Storage
Temperature Range
Single Pulse Drain–to–Source Avalanche
Energy – Starting T
J
= 25
°
C
(V
DD
= –16 Vdc, V
GS
= –4.5 Vdc, Peak I
L
= –5.0 Apk, L = 28 mH, R
G
= 25
)
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. Minimum FR–4 or G–10 PCB, Steady State.
2. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), Steady State.
3. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), t
≤
10 seconds.
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
V
DSS
V
GS
–16
10
V
V
R
θ
JA
P
D
I
D
I
D
I
DM
175
0.71
–2.3
–1.45
–9.0
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
105
1.19
–2.97
–1.88
–12
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
62.5
2.0
–3.85
–2.43
–15
–55 to
+150
350
°
C/W
W
A
A
A
°
C
E
AS
mJ
T
L
260
°
C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Device
Package
Shipping
ORDERING INFORMATION
NTMD2P01R2
SO–8
2500/Tape & Reel
http://onsemi.com
P–Channel
D
S
G
2
Source–1
Gate–1
Source–2
Gate–2
3
4
1
7
6
5
8
Drain–1
Drain–1
Drain–2
Drain–2
Top View
PIN ASSIGNMENT
–2.3 AMPERES
–16 VOLTS
100 m @ V
GS
= –4.5 V
SO–8
CASE 751
STYLE 11
1
8
ED2P01
AYWW
ED2P01
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
MARKING
DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
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| NTMD2P01R2G | 功能描述:MOSFET -16V 2.3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD3N08 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 80V V(BR)DSS | SO |
| NTMD3N08/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:80 V Power MOSFET |
| NTMD3N08L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 80V V(BR)DSS | SO |
| NTMD3N08LR2 | 功能描述:MOSFET 80V 2.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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