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參數(shù)資料
| 型號(hào)： | NTLTD7900ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 9 Amps, 20 Volts,Logic Level(9A,20V邏輯電平的功率MOSFET) |
| 中文描述： | 6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEADLESS, CASE 846C-01, MICRO-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 72K |
| 代理商： | NTLTD7900ZR2 |
Semiconductor Components Industries, LLC, 2002
September, 2002 – Rev. 2
1
Publication Order Number:
NTLTD7900ZR2/D
NTLTD7900ZR2
Power MOSFET
9 Amps, 20 Volts,
Logic Level
N–Channel Micro–8 Leadless
EZFETs
are an advanced series of Power MOSFETs which
contain monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R
DS(on)
and true
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc–dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Applications
Zener Protected Gates Provide Electrostatic Discharge Protection
Designed to Withstand 4000 V Human Body Model
Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive – Can be Driven by Logic ICs
Micro–8 Leadless Surface Mount Package – Saves Board Space
I
DSS
Specified at Elevated Temperature
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
10 Secs
Steady
State
Unit
Drain–to–Source Voltage
V
DSS
V
GS
I
D
20
V
Gate–to–Source Voltage
±
12
V
Continuous Drain Current (Note 1)
T
A
= 25
°
C
T
A
= 85
°
C
Pulsed Drain Current
(tp
10 s)
9.0
6.4
6.0
4.3
A
I
DM
30
A
Continuous Source–Diode
Conduction (Note 1)
I
s
2.9
1.4
A
Total Power Dissipation (Note 1)
T
A
= 25
°
C
T
A
= 85
°
C
Operating Junction and Storage
Temperature Range
P
D
3.2
1.7
1.5
0.79
W
T
J
, T
stg
–55 to 150
°
C
Thermal Resistance (Note 1)
Junction–to–Ambient
R
JA
38
82
°
C/W
1. When surface mounted to 1
″
x 1
″
FR–4 board.
9 AMPERES
20 VOLTS
R
DS(on)
= 26 m
(V
GS
= 4.5 V, I
D
= 6.5 A)
R
DS(on)
= 31 m
(V
GS
= 2.5 V, I
D
= 5.8 A)
Micro–8 Leadless
CASE 846C
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTLTD7900ZR2
Micro–8 LL
2500 Tape & Reel
Source 1
Gate 1
Source 2
Gate 2
Drain
Drain
Drain
Drain
(Top View)
PIN ASSIGNMENT
A
Y
WW
= Assembly Location
= Year
= Work Week
1
MARKING
DIAGRAM
7900
AYWW
1
1
2
3
4
8
7
6
5
D
D
2.4 k
2.4 k
S
2
S
1
G
2
G
1
N–Channel
N–Channel
Drain
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| NTLTS3107P_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -8.3 A, Single P-Channel,Micro8 Leadless Package |
| NTLTS3107PR2G | 功能描述:MOSFET PFET 8A PB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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