- 您現(xiàn)在的位置：買賣IC網 > PDF目錄363712 > NTLJF3117P (ON SEMICONDUCTOR) Power MOSFET and Schottky Diode(功率MOSFET和肖特基二極管) PDF資料下載
參數(shù)資料
| 型號： | NTLJF3117P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET and Schottky Diode(功率MOSFET和肖特基二極管) |
| 中文描述： | 功率MOSFET和肖特基二極管（功率MOSFET的和肖特基二極管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 91K |
| 代理商： | NTLJF3117P |
Semiconductor Components Industries, LLC, 2006
July, 2006 Rev. 2
1
Publication Order Number:
NTLJF3117P/D
NTLJF3117P
Power MOSFET and
Schottky Diode
20 V, 4.1 A, PChannel, with 2.0 A
Schottky Barrier Diode, 2x2 mm,
Cool Package
Features
FETKY Configuration with MOSFET plus Low Vf Schottky Diode
COOL Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
2x2 mm Footprint Same as SC88 Package Design
Independent Pinout Provides Circuit Design Flexibility
Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
High Current Schottky Diode: 2 A Current Rating
This is a PbFree Device
Applications
Optimized for Portable Applications like Cell Phones, Digital
Cameras, Media Players, etc.
DCDC Buck Circuit
LiIon Battery Applications
Color Display and Camera Flash Regulators
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
20
±
8.0
3.3
V
GatetoSource Voltage
Continuous Drain
Current (Note 1)
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
2.4
t
≤
5 s
Steady
State
4.1
Power Dissipation
(Note 1)
T
A
= 25
°
C
P
D
1.5
W
t
≤
5 s
2.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
I
D
2.3
A
1.6
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.71
W
Pulsed Drain Current
t
p
= 10 s
I
DM
20
A
°
C
Operating Junction and Storage Temperature
T
J
, T
STG
55 to
150
Source Current (Body Diode) (Note 2)
I
S
T
L
1.9
A
°
C
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2
, 2 oz Cu.
260
1
2
3
6
5
4
A
N/C
D
K
G
S
http://onsemi.com
20 V
30 V
135 m @ 2.5 V
100 m @ 4.5 V
2.0 A
R
DS(on)
MAX
4.1 A
0.47 V
I
D
MAX
(Note 1)
V
(BR)DSS
MOSFET
SCHOTTKY DIODE
V
R
MAX
I
F
MAX
V
F
TYP
200 m @ 1.8 V
G
S
PCHANNEL MOSFET
D
K
A
SCHOTTKY DIODE
JH
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
JHM
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
(Top View)
1
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
K
D
相關PDF資料 |
PDF描述 |
|---|---|
| NTLJS3113P | Power MOSFET(功率MOSFET) |
| NTLTD7900ZR2 | Power MOSFET 9 Amps, 20 Volts,Logic Level(9A,20V邏輯電平的功率MOSFET) |
| NTMC1300R2 | Power MOSFET 3 Amps, 30 Volts(3A,30Vde 的功率MOSFET) |
| NTMD2P01R2 | Power MOSFET -2.3 Amps, -16 Volts Dual SO–8 Package(-2.3A，-16V，雙通道，SO-8封裝的功率MOSFET) |
| NTMD3N08 | 80 V Power MOSFET(3A,80V功率MOS場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTLJF3117P_1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTLJF3117PT1G | 功能描述:MOSFET PFET 2X2 20V 4.1A 106MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJF3117PTAG | 功能描述:MOSFET PFET 20V 4.1A 106MO 2X2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJF3118N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTLJF3118NTAG | 功能描述:MOSFET NFET 2X2 20V 3.8A 70MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。