參數(shù)資料
型號(hào): NTLJD3119C
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET(功率MOSFET)
中文描述: 功率MOSFET(功率MOSFET的)
文件頁數(shù): 1/10頁
文件大?。?/td> 127K
代理商: NTLJD3119C
Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 2
1
Publication Order Number:
NTLJD3119C/D
NTLJD3119C
Power MOSFET
20 V/-20 V, 4.6 A/-4.1 A, Cool
Complementary, 2x2 mm, WDFN Package
Features
Complementary N-Channel and P-Channel MOSFET
WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
Footprint Same as SC-88 Package
Leading Edge Trench Technology for Low On Resistance
1.8 V Gate Threshold Voltage
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
This is a Pb-Free Device
Applications
Synchronous DC-DC Conversion Circuits
Load/Power Management of Portable Devices like PDA's, Cellular
Phones and Hard Drives
Color Display and Camera Flash Regulators
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
N-Ch
P-Ch
N-Ch
P-Ch
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
V
DSS
20
-20
±
8.0
V
Gate-to-Source Voltage
V
GS
V
N-Channel
Continuous Drain
Current (Note 1)
Steady
State
t
5 s
I
D
3.8
2.8
4.6
-3.3
-2.4
-4.1
1.5
A
P-Channel
Continuous Drain
Current (Note 1)
Steady
State
t
5 s
Steady
State
t
5 s
I
D
A
Power Dissipation
(Note 1)
T
A
= 25
°
C
P
D
W
2.3
2.6
N-Channel
Continuous Drain
Current (Note 2)
P-Channel
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
I
D
A
1.9
Steady
State
I
D
-2.3
A
-1.6
Steady
State
T
A
= 25
°
C
P
D
0.71
W
Pulsed Drain Current
N-Ch
P-Ch
t
p
= 10 s
I
DM
18
-20
-55 to
150
A
Operating Junction and Storage Temperature
T
J
, T
STG
°
C
Lead Temperature for Soldering Purposes
(1/8
from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2
, 2 oz Cu.
http://onsemi.com
JD
M
= Specific Device Code
= Date Code
= Pb-Free Package
(Note: Microdot may be in either location)
JDM
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D2
D1
Pin 1
1
2
3
6
5
4
S1
G1
D2
D1
G2
S2
(Top View)
PIN CONNECTIONS
D1
D2
NTLJD3119CTAG
WDFN6
(Pb-Free)
3000/Tape & Reel
N-Channel
20 V
P-Channel
-20 V
85 m @ 2.5 V
65 m @ 4.5 V
100 m @ -4.5 V
135 m @ -2.5 V
R
DS(on)
MAX
2.0 A
-2.0 A
I
D
MAX
V
(BR)DSS
120 m @ 1.8 V
200 m @ -1.8 V
NTLJD3119CTBG
WDFN6
(Pb-Free)
3000/Tape & Reel
3.8 A
1.7 A
-4.1 A
-1.6 A
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