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參數(shù)資料
| 型號： | NTLJD3115P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 88K |
| 代理商： | NTLJD3115P |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 4
1
Publication Order Number:
NTLJD3115P/D
NTLJD3115P
Power MOSFET
20 V, 4.1 A, Cool Dual PChannel,
2x2 mm WDFN Package
Features
WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
2x2 mm Footprint Same as SC88
Lowest R
DS(on)
Solution in 2x2 mm Package
1.8 V R
DS(on)
Rating for Operation at Low Voltage Gate Drive Logic
Level
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Bidirectional Current Flow with Common Source Configuration
This is a PbFree Device
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment
LiIon Battery Charging and Protection Circuits
High Side Load Switch
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
20
±
8.0
3.3
V
GatetoSource Voltage
Continuous Drain
Current (Note 1)
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
2.4
t
≤
5 s
Steady
State
4.1
Power Dissipation
(Note 1)
T
A
= 25
°
C
P
D
1.5
W
t
≤
5 s
2.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
I
D
2.3
A
1.6
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.71
W
Pulsed Drain Current
t
p
= 10 s
I
DM
20
A
°
C
Operating Junction and Storage Temperature
T
J
, T
STG
55 to
150
Source Current (Body Diode) (Note 2)
I
S
T
L
1.9
A
°
C
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2
, 2 oz Cu.
260
http://onsemi.com
20 V
135 m @ 2.5 V
100 m @ 4.5 V
R
DS(on)
MAX
4.1 A
I
D
MAX
(Note 1)
V
(BR)DSS
200 m @ 1.8 V
G1
S1
PCHANNEL MOSFET
D1
JD
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
JDM
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
NTLJD3115PT1G
WDFN6
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D2
D1
Pin 1
G2
S2
PCHANNEL MOSFET
D2
1
2
3
6
5
4
S1
G1
D2
D1
G2
S2
(Top View)
PIN CONNECTIONS
D1
D2
NTLJD3115PTAG
WDFN6
(PbFree)
3000/Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTLJD3115PT1G | 功能描述:MOSFET PFET 2X2 20V 4.1A 106MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJD3115PTAG | 功能描述:MOSFET PFET 2X2 20V 4.1A 106MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJD3119C | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Package |
| NTLJD3119CTAG | 功能描述:MOSFET COMP 2X2 20V 3.8A 100mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJD3119CTBG | 功能描述:MOSFET COMP 2X2 20V 3.8A 100mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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