參數(shù)資料
型號： NTLJD2105L
廠商： ON SEMICONDUCTOR
英文描述： POWER MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁數(shù)： 1/6頁
文件大?。?/td> 100K
代理商： NTLJD2105L
Semiconductor Components Industries, LLC, 2006
November, 2006 Rev. 0
1
Publication Order Number:
NTLJD2105L/D
NTLJD2105L
POWER MOSFET
8 V, 4.3 A, Cool High Side Load Switch
with Level Shift, 2x2 mm WDFN Package
Features
WDFN 2x2 mm Package with Exposed Drain Pads Offers Excellent
Thermal Performance
Low R
DS(on)
PChannel Load Switch with Nchannel MOSFET for
Level Shift
N Channel Operated at 1.5 V Gate Drive Voltage Level
P Channel Operated at 1.5 V Supply Voltage
Same Footprint as SC88
Low Profile (<0.8 mm) Allows it to Fit Easily into Extremely Thin
Environments
ESD Protection
These are PbFree Devices
Applications
High Slide Load Switch with Level Shift
Optimized for Power Management in Ultra Portable Equipment
MOSFET(Q2) MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Q2 Input Voltage (V
DS
, PChannel)
V
IN
8
V
Q1 On/Off Voltage (V
GS
, NChannel)
V
ON/OFF
6
V
Continuous Load
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
L
4.3
A
T
A
= 85
°
C
3.1
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
1.56
W
Continuous Load
Current (Note 2)
Steady
State
T
A
= 25
°
C
I
L
2.5
A
T
A
= 85
°
C
1.8
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.52
W
Pulsed Load
Current
t
p
= 10 s
I
LM
20
A
Operating Junction and Storage
Temperature
T
J
,
T
STG
55 to
150
°
C
Source Current (Body Diode) (Note 2)
I
S
2.7
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size.
1
2
3
6
5
4
S1
G1
D2
D1/G2
S2
http://onsemi.com
20 V
60 m @ 2.5 V
50 m @ 4.5 V
R
DS(on)
MAX
4.3 A
I
L
MAX
V
INMAX
80 m @ 1.8 V
115 m @ 1.5 V
JN
M
= Specific Device Code
= Date Code
= PbFree Package
WDFN6
CASE 506AZ
MARKING
DIAGRAM
(Top View)
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
JN M
1
2
3
6
5
4
D2
Q1
Q2
2, 3
6
4
5
1
Pin 1
D1/G2
D2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTLJD2105LTBG 功能描述:MOSFET 8 V-4.3A HS LOADSW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTLJD3115P 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET
NTLJD3115PT1G 功能描述:MOSFET PFET 2X2 20V 4.1A 106MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTLJD3115PTAG 功能描述:MOSFET PFET 2X2 20V 4.1A 106MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTLJD3119C 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Package
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