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參數(shù)資料
| 型號： | NTL4502N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Quad Power MOSFET(四功率MOSFET) |
| 中文描述： | 四功率MOSFET（四功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | NTL4502N |
Semiconductor Components Industries, LLC, 2003
August, 2003 Rev. 2
1
Publication Order Number:
NTL4502N/D
NTL4502N
Quad Power MOSFET
24 V, 15 A, NChannel, PInPAK Package
Features
Four NChannel MOSFETs in a Single Package
High Drain Current (Up to 80A per Device, Single Pulse t
p
< 10
μ
s,
R
JC
= 1.5
°
C/W)
High Input Impedance for Ease of Drive
Ultra Low Onresistance (R
DS(on)
)
Provides Low Conduction Losses
Very Fast Switching Times Provides Low Switching Losses
Low Parasitic Inductance
Low Stored Charge for Efficient Switching
Very Low V
SD
Ideal for Synchronous Rectification
200% Footprint Reduction Compared to Similar DPAK Solution for
the Same Power
Advanced Leadless Power Integrated Package (PInPAK)
Applications
DCDC Converters
Motherboard/Server Voltage Regulator
Telecomm/Industrial Power Supply
HBridge Circuits
Low Voltage Motor Control
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Units
DraintoSource Voltage
V
DSS
V
GS
I
D
24
V
GatetoSource Voltage
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
=25
°
C
T
A
=85
°
C
T
A
=25
°
C
T
A
=25
°
C
15
A
10.9
t
≤
10 s
18.8
Power Dissipation
(Note 1)
Steady
State
P
D
2.9
W
t
≤
10 s
Steady
State
4.5
Continuous Drain
Current (Note 2)
T
A
=25
°
C
T
A
=85
°
C
T
A
=25
°
C
I
D
11.4
A
8.2
Power Dissipation
(Note 2)
P
D
1.7
W
Pulsed Drain Current
tp=10
μ
s
I
DM
32
A
Operating Junction and Storage
Temperature
T
J
, T
STG
55 to 150
°
C
Source Current (Body Diode)
I
S
15
A
Single Pulse DraintoSource Avalanche
Energy – (V
DD
= 25 V, V
G
=10 V, I
PK
=60 A,
L=0.1 mH, R
G
= 1.0 k )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
80
mJ
T
L
260
°
C
15
G4 S3 D3G3
(Bottom View)
S4
D4
Pinout Diagram
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTL4502NT1
PInPAK
1500 / Reel
CASE 495
PInPAK
STYLE 1
xx
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
MARKING
DIAGRAM
NTL4502N
AYWW
1
16
16
1
2 3
4
5 6
7
8
16
D1
D4
D2
D3
S1 D1G1 S2 D2G2
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
(Note 1)
24 V
8.0 m
@ 4.5 V
15 A
11.2 m
@ 10 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTL4502NT1 | 功能描述:MOSFET 24V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLB122 | 功能描述:LCD 觸摸面板 RoHS:否 制造商:3M Touch Systems 類型:P-MVA 大小:22 in 絕緣電阻: 封裝:Bulk |
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| NTLGD3502NT1G | 功能描述:MOSFET NFET DFN 20V 4.6A 3X3mm 60M RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLGD3502NT2G | 功能描述:MOSFET NFET DFN 20V 4.6A 3X3 60M RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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