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參數(shù)資料
| 型號： | NTJD1155L |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 8V, ±1.3A, High Side Load Switch with Level Shift, P Channel SC88(8V, ±1.3A功率MOSFET) |
| 中文描述： | 功率MOSFET 8V的，± 1.3a標(biāo)準(zhǔn)，高端負(fù)載開關(guān)，位移，P通道SC88（8V的，± 1.3a標(biāo)準(zhǔn)功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | NTJD1155L |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 2
1
Publication Order Number:
NTJD1155L/D
NTJD1155L
Power MOSFET
8 V, 1.3 A, High Side Load Switch with
LevelShift, PChannel SC88
The NTJD1155L integrates a P and NChannel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The PChannel device is specifically
designed as a load switch using ON Semiconductor stateoftheart
trench technology. The NChannel, with an external resistor (R1),
functions as a levelshift to drive the PChannel. The NChannel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
V
IN
and V
ON/OFF
.
Features
Extremely Low R
DS(on)
PChannel Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
V
IN
Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
ESD Rating of 3000 V
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Input Voltage (V
DSS
, PCh)
ON/OFF Voltage (V
GS
, NCh)
Continuous Load Current
(Note 1)
V
IN
8.0
V
V
ON/OFF
I
L
8.0
V
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
t
p
= 10 s
±
1.3
±
0.9
A
Power Dissipation
(Note 1)
Steady
State
P
D
0.40
W
0.20
Pulsed Load Current
I
LM
T
J
,
T
STG
±
3.9
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
I
S
0.4
A
ESD Rating, MILSTD883D HBM
(100 pF, 1.5 k )
ESD
3.0
kV
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
°
C/W
JunctiontoAmbient – Steady State (Note 1)
R
θ
JA
R
θ
JF
320
JunctiontoFoot – Steady State (Note 1)
220
1. Surfacemounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
2,3
5
6
SIMPLIFIED SCHEMATIC
SC88
(SOT363)
CASE 419B
STYLE 30
MARKING
DIAGRAM
TE
M
= Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
3
D2
1
S1
S2
4
2
D2
G1
5
D1/G2
6
4
Q2
Q1
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8.0 V
170 m @ 2.5 V
130 m @ 4.5 V
R
DS(on)
TYP
±
1.3 A
I
D
MAX
V
(BR)DSS
260 m @ 1.8 V
Device
Package
Shipping
ORDERING INFORMATION
NTJD1155LT1
SC88
3000/Tape & Reel
NTJD1155LT1G
SC88
(PbFree)
3000/Tape & Reel
1
TE M
1
6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTJD2152P | Trench Small Signal MOSFET 8 V, Dual P Channel, SC88 ESD Protection(8V雙功率MOSFET帶ESD保護(hù)) |
| NTJD4105C | Small Signal MOSFET 20V/8.0V, Complementary, +0.63A/0.775A, SC88(小信號20V/8.0V，+0.63A/0.775A，MOSFET) |
| NTJD4152P | Trench Small Signal MOSFET 20V, 0.88A, Dual P Channel, ESD Protected SC88(小信號20V，0.88A雙P溝道MOSFET) |
| NTJD4158C | Small Signal MOSFET 30 V/(30V/) |
| NTJD4401N | Small Signal MOSFET 20V, Dual N Channel, SC88 ESD Protection(小信號20V，雙N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTJD1155LT1 | 功能描述:MOSFET 8V +/-1.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD1155LT1G | 功能描述:MOSFET 8V +/-1.3A P-Channel w/Level Shift RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD116N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTJD2152P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Trench Small Signal MOSFET |
| NTJD2152P_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Trench Small Signal MOSFET |
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