參數(shù)資料
型號(hào)： NTJD4152P
廠商： ON SEMICONDUCTOR
英文描述： Trench Small Signal MOSFET 20V, 0.88A, Dual P Channel, ESD Protected SC88(小信號(hào)20V，0.88A雙P溝道MOSFET)
中文描述： 戴小信號(hào)MOSFET 20V的，0.88A，雙P通道，ESD保護(hù)SC88（小信號(hào)20V的，0.88A雙P溝道MOSFET的）
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 133K
代理商： NTJD4152P
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 1
1
Publication Order Number:
NTJD4152/D
NTJD4152P
Trench Small Signal
MOSFET
20 V, 0.88 A, Dual P
Channel,
ESD Protected SC
88
Features
Leading Trench Technology for Low R
DS(ON)
Performance
Small Footprint Package (SC70
6 Equivalent)
ESD Protected Gate
Pb
Free Package is Available
Applications
Load/Power Management
Charging Circuits
Load Switching
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
V
GS
I
D
20
V
Gate
to
Source Voltage
±
12
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
t
≤
10 s
0.88
A
0.63
Power Dissipation
(Note 1)
Steady
State
P
D
0.272
W
0.141
Continuous Drain
Current (Note 2)
t
5 s
I
D
1.0
A
0.72
Power Dissipation
(Note 2)
t
5 s
P
D
0.35
W
0.181
Pulsed Drain Current
I
DM
T
J
,
T
STG
I
S
±
3.0
A
°
C
Operating Junction and Storage Temperature
55 to
150
Continuous Source Current (Body Diode)
0.48
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
(Note 1)
Parameter
Symbol
Max
Unit
Junction
to
Ambient – Steady State
R
JA
460
°
C/W
Junction
to
Ambient
t
5 s
R
JA
357
Junction
to
Lead – Steady State
R
JL
226
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), steady state.
2. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), t
5 s.
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
http://onsemi.com
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
V
(BR)DSS
R
DS(on)
Typ
I
D
Max
20 V
215 m @
4.5 V
345 m @
2.5 V
600 m @
1.8 V
0.88 A
D
2
TK
M
1
6
1
TK
M
= Device Code
= Date Code
= Pb
Free Package
S1 G1 D2
(Note: Microdot may be in either location)
Device
Package
Shipping
ORDERING INFORMATION
NTJD4152PT1
SOT
363
3000 Units/Reel
NTJD4152PT1G
SOT
363
(Pb
Free)
3000 Units/Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SC
88/SOT
363
CASE 419B
STYLE 28
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTJD4152PT1 功能描述:MOSFET 20V 0.88A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4152PT1G 功能描述:MOSFET 20V 0.88mA P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4158C 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88
NTJD4158CT1G 功能描述:MOSFET PFET 20V .88A 1OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4158CT2G 功能描述:MOSFET PFET 20V .88A 1OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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