參數(shù)資料
型號： NTJD4158C
廠商： ON SEMICONDUCTOR
英文描述： Small Signal MOSFET 30 V/(30V/)
中文描述： 小信號MOSFET 30第V /（30V的/）
文件頁數(shù)： 1/7頁
文件大?。?/td> 152K
代理商： NTJD4158C
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 1
1
Publication Order Number:
NTJD4158C/D
NTJD4158C
Small Signal MOSFET
30 V/
20 V, +0.25/
0.88 A,
Complementary, SC
88
Features
Leading 20 V Trench for Low R
DS(on)
Performance
ESD Protected Gate
SC
88 Package for Small Footprint (2 x 2 mm)
This is a Pb
Free Device
Applications
DC
DC Conversion
Load/Power Management
Load Switch
Cell Phones, MP3s, Digital Cameras, PDAs
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Drain
to
Source Voltage
Symbol
V
DSS
Value
Unit
V
N
Ch
30
P
Ch
20
Gate
to
Source Voltage
N
Ch
V
GS
±
20
±
12
V
P
Ch
N
Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
0.25
A
T
A
= 85
°
C
0.18
P
Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
0.88
T
A
= 85
°
C
0.63
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
0.27
W
Pulsed Drain Cur-
rent
N
Ch
tp = 10 s
I
DM
0.5
A
P
Ch
3.0
Operating Junction and Storage Temperature
T
J
, T
stg
55 to
150
°
C
Source Current (Body Diode)
N
Ch
I
S
0.25
A
P
Ch
0.48
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction
to
Ambient – Steady State (Note 1)
R
JA
460
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
(Top View)
http://onsemi.com
D
1
G
2
S
2
S
1
G
1
D
2
6
5
4
1
2
3
N
Ch
30 V
1.0 @ 4.5 V
R
DS(on)
Typ
0.25 A
I
D
Max
V
(BR)DSS
1.5 m @ 2.5 V
215 m @
4.5 V
P
Ch
20 V
345 m @
2.5 V
0.88 A
SC
88 (SOT
363)
(6
Leads)
Device
Package
Shipping
ORDERING INFORMATION
NTJD4158CT1G
SC
88
(Pb
Free)
3000 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
TCD
M
1
6
1
MARKING DIAGRAM &
PIN ASSIGNMENT
SC
88 (SOT
363)
CASE 419B
STYLE 26
TCD
M
= Specific Device Code
= Date Code
= Pb
Free Package
(Note: Microdot may be in either location)
S1
G1 D2
D1 G2 S2
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTJD4158CT1G 功能描述:MOSFET PFET 20V .88A 1OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4158CT2G 功能描述:MOSFET PFET 20V .88A 1OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4401N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401N_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401N_08 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
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