參數(shù)資料
型號： NTJD4401N
廠商： ON SEMICONDUCTOR
英文描述： Small Signal MOSFET 20V, Dual N Channel, SC88 ESD Protection(小信號20V，雙N溝道MOSFET)
中文描述： 小信號MOSFET 20V的，雙N通道，SC88 ESD保護（小信號20V的，雙?溝道MOSFET的）
文件頁數(shù)： 1/5頁
文件大?。?/td> 130K
代理商： NTJD4401N
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTJD4401N/D
NTJD4401N
Small Signal MOSFET
20 V, Dual N
Channel, SC
88
ESD Protection
Features
Small Footprint (2 x 2 mm)
Low Gate Charge N
Channel Device
ESD Protected Gate
Same Package as SC
70 (6 Leads)
Pb
Free Packages are Available
Applications
Load Power switching
Li
Ion Battery Supplied Devices
Cell Phones, Media Players, Digital Cameras, PDAs
DC
DC Conversion
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain
to
Source Voltage
V
DSS
20
V
Gate
to
Source Voltage
V
GS
±
12
V
Continuous Drain
Current
(Based on R
JA
)
Power Dissipation
(Based on R
JA
)
Steady
State
T
A
= 25
°
C
I
D
0.63
A
T
A
= 85
°
C
0.46
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
P
D
0.27
W
0.14
Continuous Drain
Current
(Based on R
JL
)
Power Dissipation
(Based on R
JL
)
Steady
State
I
D
0.91
A
T
A
= 85
°
C
0.65
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
P
D
0.55
W
0.29
Pulsed Drain Current
t
≤
10 s
I
DM
±
1.2
A
°
C
Operating Junction and Storage Temperature
T
J
, T
STG
55 to
150
Continuous Source Current (Body Diode)
I
S
0.63
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
(Note 1)
Parameter
Symbol
Typ
Max
Units
Junction
to
Ambient – Steady State
R
JA
400
460
°
C/W
Junction
to
Lead (Drain) – Steady State
R
JL
194
226
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ
I
D
Max
8 V
0.22 @
4.5 V
0.32 @
2.5 V
0.51 @
1.8 V
0.775 A
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
TD
M
1
6
1
TD
M
= Device Code
= Date Code
= Pb
Free Package
S1 G1 D2
(Note: Microdot may be in either location)
Top View
SC
88 (SOT
363)
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
D
2
SC
88/SOT
363
CASE 419B
STYLE 28
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTJD4401N_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401N_08 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT1 功能描述:MOSFET 20V Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4401NT1G 功能描述:MOSFET 20V Dual N-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4401NT2 功能描述:MOSFET 20V Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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