參數(shù)資料
型號： NTJS4160N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 30 V, 3.2 A(30V, 3.2A, 功率MOFSFET)
中文描述： 功率MOSFET 30五，3.2（30V的，3.2A，功率MOFSFET）
文件頁數(shù)： 1/6頁
文件大?。?/td> 66K
代理商： NTJS4160N
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 0
1
Publication Order Number:
NTJS4160N/D
NTJS4160N
Power MOSFET
30 V, 3.2 A, Single NChannel, SC88
Features
Offers an Low R
DS(on)
Solution in the SC88 Package
Low Profile (< 1.1 mm) Allows it to fit Easily into Extremely Thin
Environments such as Portable Electronics
Operates at Standard Logic Level Gate Drive
Low Gate Charge
This is a PbFree Device
Applications
DCDC Converters (Buck and Boost Circuit)
Optimized for Battery Powered Portable Equipment such as,
Cell Phones, PDAs, Media Players, etc.
Load Management
Battery Charging and OV IC Protection Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
Continuous Drain
Current (Note 1)
±
20
2.6
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
1.9
t
≤
1 s
Steady
State
3.2
Power Dissipation
(Note 1)
T
A
= 25
°
C
P
D
0.62
W
t
≤
1 s
0.95
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
I
D
1.8
A
1.3
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.3
W
Pulsed Drain Current
t
p
= 10 s
I
DM
T
J
,
T
STG
I
S
10
A
°
C
Operating Junction and Storage Temperature
55 to
150
Source Current (Body Diode)
1.3
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size.
Device
Package
Shipping
ORDERING INFORMATION
Top View
SC88
(SOT 363)
CASE 419B
STYLE 28
T92
M
MARKING DIAGRAM
6
1
http://onsemi.com
= Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
SC88
(SOT363)
D
D
S
D
D
6
5
4
1
2
3
V
(BR)DSS
R
DS(on)
TYP
45 m @ 10 V
I
D
Max
65 m @ 4.5 V
3.2 A
NTJS4160NT1G
SC88
(PbFree)
3000 Units/Reel
T92 M
G
30 V
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
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參數(shù)描述
NTJS4160NT1G 功能描述:MOSFET NFET 30V 3.2A 60MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJS4405N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT1 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJS4405NT1G 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJS4405NT4 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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