參數資料
型號： NTJD4105C
廠商： ON SEMICONDUCTOR
英文描述： Small Signal MOSFET 20V/8.0V, Complementary, +0.63A/0.775A, SC88(小信號20V/8.0V，+0.63A/0.775A，MOSFET)
中文描述： 小信號MOSFET 20V/8.0V，互補，0.63A/0.775A，SC88（小信號20V/8.0V，0.63A/0.775A器，MOSFET）
文件頁數： 1/8頁
文件大小： 149K
代理商： NTJD4105C
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTJD4105C/D
NTJD4105C
Small Signal MOSFET
20 V /
8.0 V, Complementary,
+0.63 A /
0.775 A, SC
88
Features
Complementary N and P Channel Device
Leading
8.0 V Trench for Low R
DS(on)
Performance
ESD Protected Gate
ESD Rating: Class 1
SC
88 Package for Small Footprint (2 x 2 mm)
Pb
Free Packages are Available
Applications
DC
DC Conversion
Load/Power Switching
Single or Dual Cell Li
Ion Battery Supplied Devices
Cell Phones, MP3s, Digital Cameras, PDAs
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Drain
to
Source Voltage
Symbol
V
DSS
Value
20
8.0
±
12
±
8.0
0.63
0.46
0.775
0.558
0.91
0.65
1.1
0.8
±
1.2
0.27
0.14
0.55
0.29
55 to
150
0.63
0.775
260
Unit
V
N
Ch
P
Ch
N
Ch
P
Ch
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
tp
≤
10 s
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
Gate
to
Source Voltage
V
GS
V
Continuous Drain Current
Steady State
(Based on R
JA
)
N
Ch
I
D
A
P
Ch
Continuous Drain Current
Steady State
(Based on R
JL
)
N
Ch
P
Ch
Pulsed Drain Current
Power Dissipation
Steady State
(Based on R
JA
)
I
DM
P
D
A
W
Power Dissipation
Steady State
(Based on R
JL
)
Operating Junction and Storage Temperature
T
J
,
T
STG
I
S
°
C
Source Current (Body Diode)
N
Ch
P
Ch
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
THERMAL RESISTANCE RATINGS
(Note 1)
T
L
°
C
Junction
to
Ambient
– Steady State
Typ
Max
Typ
Max
R
JA
400
460
194
226
°
C/W
Junction
to
Lead (Drain)
– Steady State
R
JL
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
http://onsemi.com
V
(BR)DSS
R
DS(on)
TYP
I
D
Max
N
Ch 20 V
0.29 @ 4.5 V
0.36 @ 2.5 V
0.63 A
TC
M
1
6
1
TC
M
= Device Code
= Date Code
= Pb
Free Package
S1 G1 D2
(Note: Microdot may be in either location)
P
Ch
8.0 V
0.22 @
4.5 V
0.32 @
2.5 V
0.51 @
1.8 V
0.775 A
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
Top View
SOT
363
SC
88 (6
LEADS)
D
1
G
2
S
2
S
1
G
1
D
2
6
5
4
1
2
3
SC
88/SOT
363
CASE 419B
STYLE 28
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相關代理商/技術參數
參數描述
NTJD4105CT1 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4105CT1G 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4105CT2 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4105CT2G 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD4105CT4 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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