參數(shù)資料
型號： NTJD2152P
廠商： ON SEMICONDUCTOR
英文描述： Trench Small Signal MOSFET 8 V, Dual P Channel, SC88 ESD Protection(8V雙功率MOSFET帶ESD保護)
中文描述： 戴小信號MOSFET 8伏特的電壓，雙P通道，SC88 ESD保護（8V的雙功率MOSFET的帶靜電放電保護）
文件頁數(shù)： 1/6頁
文件大?。?/td> 133K
代理商： NTJD2152P
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 3
1
Publication Order Number:
NTJD2152/D
NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P
Channel, SC
88
ESD Protection
Features
Leading –8 V Trench for Low R
DS(ON)
Performance
ESD Protected Gate
Small Footprint (2 x 2 mm)
Same Package as SC
70
6
Pb
Free Packages are Available
Applications
Load Power switching
DC
DC Conversion
Li
Ion Battery Charging Circuits
Cell Phones, Media Players, Digital Cameras, PDAs
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
8.0
V
Gate
to
Source Voltage
V
GS
±
8.0
V
Continuous Drain
Current
(Based on R
JA
)
Power Dissipation
(Based on R
JA
)
Steady
State
T
A
= 25
°
C
I
D
0.775
A
T
A
= 85
°
C
0.558
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
P
D
0.27
W
0.14
Continuous Drain
Current
(Based on R
JL
)
Power Dissipation
(Based on R
JL
)
Steady
State
I
D
1.1
A
T
A
= 85
°
C
0.8
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
P
D
0.55
W
0.29
Pulsed Drain Current
t
≤
10 s
I
DM
±
1.2
A
°
C
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
Continuous Source Current (Body Diode)
I
S
0.775
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
(Note 1)
Parameter
Symbol
Typ
Max
Unit
Junction
to
Ambient – Steady State
R
JA
400
460
°
C/W
Junction
to
Lead (Drain) – Steady State
R
JL
194
226
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
http://onsemi.com
SOT
363
SC
88 (6 LEADS)
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
V
(BR)DSS
R
DS(on)
TYP
I
D
Max
8 V
0.22 @
4.5 V
0.32 @
2.5 V
0.51 @
1.8 V
0.775 A
D
2
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
TA
M
1
6
1
TA
M
= Device Code
= Date Code
= Pb
Free Package
S1 G1 D2
(Note: Microdot may be in either location)
SC
88/SOT
363
CASE 419B
STYLE 28
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTJD2152P_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Trench Small Signal MOSFET
NTJD2152PT1 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD2152PT1G 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD2152PT2 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD2152PT2G 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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