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參數(shù)資料
| 型號： | NTGD1100 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 8V,±3.3A,Load Switch with Level Shift,P Channel,TSOP6 Power MOSFET(8V,±3.3A,P溝道功率MOSFET) |
| 中文描述： | 8V的，± 3.3A，負載與電平轉(zhuǎn)換，P通道，TSOP6功率MOSFET開關(guān)（8V的，± 3.3A，P溝道功率MOSFET的） |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 70K |
| 代理商： | NTGD1100 |
NTGD1100L
http://onsemi.com
5
PACKAGE DIMENSIONS
TSOP6
CASE 318G02
ISSUE P
2
3
4
5
6
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
c
L
0.95
0.037
1.9
0.075
0.95
0.037
mm
inches
SCALE 10:1
1.0
0.039
2.4
0.094
0.7
0.028
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0
°
NOM
1.00
0.06
0.38
0.18
3.00
1.50
0.95
0.40
2.75
MAX
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
1
0
°
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0
°
MILLIMETERS
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
1
0
°
MAX
STYLE 11:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1/GATE 2
ON Semiconductor
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
NTGD1100L/D
PUBLICATION ORDERING INFORMATION
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Fax
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Email
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For additional information, please contact your local
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相關(guān)代理商/技術(shù)參數(shù) |
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| NTGD1100L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTGD1100LT1 | 功能描述:MOSFET 8V +/-3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGD1100LT1G | 功能描述:MOSFET 8V +/-3.3A P-Channel w/Level Shift RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGD3122C | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTGD3133P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual |
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