- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361158 > NTGS4141N (ON SEMICONDUCTOR) Power MOSFET(功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTGS4141N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 63K |
| 代理商： | NTGS4141N |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 1
1
Publication Order Number:
NTGS4141N/D
NTGS4141N
Power MOSFET
30 V, 7.0 A, Single NChannel, TSOP6
Features
Low R
DS(on)
Low Gate Charge
PbFree Package is Available
Applications
Load Switch
Notebook PC
Desktop PC
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
5.0
A
3.6
t
≤
10 s
7.0
Power Dissipation
(Note 1)
Steady
State
P
D
1.0
W
t
≤
10 s
Steady
State
2.0
Continuous Drain
Current (Note 2)
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
3.5
A
2.5
Power Dissipation
(Note 2)
P
D
0.5
W
Pulsed Drain Current
t
p
= 10 s
I
DM
T
J
,
T
STG
21
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
I
S
2.0
A
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 30 V, I
L
= 10.4 A, V
GS
= 10 V,
L = 1.0 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
EAS
54
mJ
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
°
C/W
JunctiontoAmbient – Steady State (Note 1)
R
θ
JA
R
θ
JA
R
θ
JA
125
JunctiontoAmbient – t
≤
10 s (Note 1)
62.5
JunctiontoAmbient – Steady State (Note 2)
248
1. Surfacemounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0773 in sq).
TSOP6
CASE 318G
STYLE 1
MARKING
DIAGRAM
S4 M
S4
M
= Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
3
Gate
1
Drain
Source
4
2
Drain
Drain
5
Drain
6
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTGS4141NT1
TSOP6
TSOP6
(PbFree)
3000/Tape & Reel
NTGS4141NT1G
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
30 V
30 m @ 4.5 V
21.5 m @ 10 V
R
DS(on)
TYP
7.0 A
I
D
MAX
V
(BR)DSS
1 2 5 6
3
4
Drain
Gate
Source
NChannel
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTH039C3 | Crystal Clock Oscillator |
| NTH06JA3 | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:20-41 |
| NTH06JAA3 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| NTH06JB3 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; Number of Contacts:21; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| NTH26JA3 | XTAL MTL SMT HC49/USM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTGS4141NT1 | 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS4141NT1G | 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS4141NT1G-CUT TAPE | 制造商:ON 功能描述:NTGS Series N-Channel 30 V 21.5 mOhm 1 W Surface Mount Power MOSFET - TSOP-6 |
| NTGS5120P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6 |
| NTGS5120PT1G | 功能描述:MOSFET PFET TSOP6 60V 2.5A 110mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。