參數(shù)資料
型號(hào)： NTGS4141N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 63K
代理商： NTGS4141N
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 1
1
Publication Order Number:
NTGS4141N/D
NTGS4141N
Power MOSFET
30 V, 7.0 A, Single NChannel, TSOP6
Features
Low R
DS(on)
Low Gate Charge
PbFree Package is Available
Applications
Load Switch
Notebook PC
Desktop PC
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
5.0
A
3.6
t
≤
10 s
7.0
Power Dissipation
(Note 1)
Steady
State
P
D
1.0
W
t
≤
10 s
Steady
State
2.0
Continuous Drain
Current (Note 2)
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
3.5
A
2.5
Power Dissipation
(Note 2)
P
D
0.5
W
Pulsed Drain Current
t
p
= 10 s
I
DM
T
J
,
T
STG
21
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
I
S
2.0
A
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 30 V, I
L
= 10.4 A, V
GS
= 10 V,
L = 1.0 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
EAS
54
mJ
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
°
C/W
JunctiontoAmbient – Steady State (Note 1)
R
θ
JA
R
θ
JA
R
θ
JA
125
JunctiontoAmbient – t
≤
10 s (Note 1)
62.5
JunctiontoAmbient – Steady State (Note 2)
248
1. Surfacemounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0773 in sq).
TSOP6
CASE 318G
STYLE 1
MARKING
DIAGRAM
S4 M
S4
M
= Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
3
Gate
1
Drain
Source
4
2
Drain
Drain
5
Drain
6
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTGS4141NT1
TSOP6
TSOP6
(PbFree)
3000/Tape & Reel
NTGS4141NT1G
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
30 V
30 m @ 4.5 V
21.5 m @ 10 V
R
DS(on)
TYP
7.0 A
I
D
MAX
V
(BR)DSS
1 2 5 6
3
4
Drain
Gate
Source
NChannel
1
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NTGS4141NT1G 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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