參數(shù)資料
型號： NTGS4141N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁數(shù)： 4/5頁
文件大?。?/td> 63K
代理商： NTGS4141N
NTGS4141N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
Figure 7. Capacitance Variation
Figure 8. GateToSource and
DrainToSource Voltage vs. Total Charge
0.9
2
0
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
I
S
,
V
GS
= 0 V
T
J
= 25
°
C
0.4
0
7
Figure 10. Diode Forward Voltage vs. Current
0.8
0.6
5
6
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C
200
1200
10
0
5
10
5
T
J
= 25
°
C
C
iss
C
oss
C
rss
15
20
25
0
400
600
C
iss
C
rss
V
DS
= 0 V
V
GS
= 0 V
V
DS
V
GS
V
0
4
0
Q
G
, TOTAL GATE CHARGE (nC)
10
8
I
D
= 7 A
V
DD
= 15 V
T
J
= 25
°
C
V
GS
Q
GS
R
G
, GATE RESISTANCE (OHMS)
1
10
100
1000
10
t
V
DD
= 24 V
I
D
= 7 A
V
GS
= 10 V
t
r
t
d(on)
t
f
t
d(off)
Q
GD
QT
1
4
800
150
0
25
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
E
A
I
D
= 10.4 A
60
100
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
125
75
40
20
6
2
12
10
2
4
6
8
0.2
50
1000
100
1
3
0.3
0.7
0.5
0.1
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