參數(shù)資料
型號： NTGS4141N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁數(shù)： 2/5頁
文件大?。?/td> 63K
代理商： NTGS4141N
NTGS4141N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
18.4
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°
C
1.0
A
T
J
= 125
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20 V
±
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.0
3.0
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.7
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 7.0 A
21.5
25
m
V
GS
= 4.5 V, I
D
= 6.0 A
30
35
Forward Transconductance
g
FS
V
DS
= 10 V, I
D
= 7.0 A
30
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 24 V
560
pF
Output Capacitance
C
OSS
115
Reverse Transfer Capacitance
C
RSS
75
Total Gate Charge
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 7.0 A
12
nC
Threshold Gate Charge
Q
G(TH)
0.85
GatetoSource Charge
Q
GS
1.9
GatetoDrain Charge
Q
GD
3.0
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 7.0 A
6.0
nC
Threshold Gate Charge
Q
G(TH)
0.8
GatetoSource Charge
Q
GS
1.85
GatetoDrain Charge
Q
GD
3.0
Gate Resistance
R
G
2.8
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(ON)
V
GS
= 10 V, V
DS
= 24 V,
I
D
= 7.0 A, R
G
= 3.0
6.0
ns
Rise Time
t
r
15
TurnOff Delay Time
t
d(OFF)
18
Fall Time
t
f
4.0
DRAIN SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 2.0 A
T
J
= 25
°
C
0.78
1.0
V
T
J
= 125
°
C
0.63
Reverse Recovery Time
t
RR
V
GS
= 0
V
dI
S
/dt = 100 A/ s, I
S
= 2.0 A
15
ns
Charge Time
t
a
9.0
Discharge Time
t
b
6.0
Reverse Recovery Charge
Q
RR
2%.
8.0
nC
3. Pulse Test: pulse width
4. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
相關(guān)PDF資料
PDF描述
NTH039C3 Crystal Clock Oscillator
NTH06JA3 Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:20-41
NTH06JAA3 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
NTH06JB3 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; Number of Contacts:21; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
NTH26JA3 XTAL MTL SMT HC49/USM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTGS4141NT1 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTGS4141NT1G 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTGS4141NT1G-CUT TAPE 制造商:ON 功能描述:NTGS Series N-Channel 30 V 21.5 mOhm 1 W Surface Mount Power MOSFET - TSOP-6
NTGS5120P 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6
NTGS5120PT1G 功能描述:MOSFET PFET TSOP6 60V 2.5A 110mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*