參數(shù)資料
型號(hào)： NTGS4111P
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 30V, 4.7A, Single P Channel, TSOP6(30V, 4.7A功率MOSFET)
中文描述： 30V的功率MOSFET，4.7A，單P通道，TSOP6（30V的，4.7A功率MOSFET的）
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 146K
代理商： NTGS4111P
Semiconductor Components Industries, LLC, 2006
February, 2006
Rev. 1
1
Publication Order Number:
NTGS4111P/D
NTGS4111P
Power MOSFET
30 V,
4.7 A, Single P
Channel, TSOP
6
Features
Leading
30 V Trench Process for Low R
DS(on)
Low Profile Package Suitable for Portable Applications
Surface Mount TSOP
6 Package Saves Board Space
Improved Efficiency for Battery Applications
Pb
Free Package is Available
Applications
Battery Management and Switching
Load Switching
Battery Protection
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
V
GS
I
D
30
V
Gate
to
Source Voltage
Continuous Drain
Current (Note 1)
±
20
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
3.7
2.7
t
≤
5 s
4.7
Power Dissipation
(Note 1)
Steady
State
P
D
1.25
W
t
≤
5 s
Steady
State
2.0
Continuous Drain
Current (Note 2)
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
2.6
A
1.9
Power Dissipation
(Note 2)
P
D
0.63
W
Pulsed Drain Current
tp
= 10 s
I
DM
T
J
,
T
STG
I
S
T
L
15
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
1.7
A
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
260
°
C
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
°
C/W
Junction
to
Ambient – Steady State (Note 1)
R
JA
R
JA
R
JA
100
Junction
to
Ambient – t
≤
5 s (Note 1)
62.5
Junction
to
Ambient – Steady State (Note 2)
200
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface
mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface
mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.006 in sq).
3
4
1 2 5 6
Device
Package
Shipping
ORDERING INFORMATION
NTGS41111P
TSOP
6
3000 / Tape & Reel
P
Channel
http://onsemi.com
NTGS41111PG
TSOP
6
(Pb
Free)
3000 / Tape& Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
TSOP
6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
TG M
TG
M
= Specific Device Code
= Date Code*
= Pb
Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Source
4
Drain
6
Drain
5
3
Gate
1
Drain
2
Drain
30 V
68 m @
4.5 V
38 m @
10 V
R
DS(on)
TYP
4.7 A
I
D
MAX
V
(BR)DSS
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NTGS4111PT1 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTGS4111PT1G 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTGS4111PT2G 功能描述:MOSFET PFET 4.7A 30V TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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