參數(shù)資料
型號(hào): NTGS4111P
廠(chǎng)商: ON SEMICONDUCTOR
英文描述: Power MOSFET 30V, 4.7A, Single P Channel, TSOP6(30V, 4.7A功率MOSFET)
中文描述: 30V的功率MOSFET,4.7A,單P通道,TSOP6(30V的,4.7A功率MOSFET的)
文件頁(yè)數(shù): 5/5頁(yè)
文件大小: 146K
代理商: NTGS4111P
NTGS4111P
http://onsemi.com
5
PACKAGE DIMENSIONS
TSOP
6
CASE 318G
02
ISSUE P
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
2
3
4
5
6
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
c
L
0.95
0.037
1.9
0.075
0.95
0.037
mm
inches
SCALE 10:1
1.0
0.039
2.4
0.094
0.7
0.028
*For additional information on our Pb
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0
°
NOM
1.00
0.06
0.38
0.18
3.00
1.50
0.95
0.40
2.75
MAX
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
1
0
°
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0
°
MILLIMETERS
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
1
0
°
MAX
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NTGS4111P/D
LITERATURE FULFILLMENT
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P.O. Box 61312, Phoenix, Arizona 85082
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