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參數(shù)資料
| 型號： | NTGS4111P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 4.7A, Single P Channel, TSOP6(30V, 4.7A功率MOSFET) |
| 中文描述： | 30V的功率MOSFET，4.7A，單P通道，TSOP6（30V的，4.7A功率MOSFET的） |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 146K |
| 代理商： | NTGS4111P |
NTGS4111P
http://onsemi.com
5
PACKAGE DIMENSIONS
TSOP
6
CASE 318G
02
ISSUE P
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
2
3
4
5
6
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
c
L
0.95
0.037
1.9
0.075
0.95
0.037
mm
inches
SCALE 10:1
1.0
0.039
2.4
0.094
0.7
0.028
*For additional information on our Pb
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0
°
NOM
1.00
0.06
0.38
0.18
3.00
1.50
0.95
0.40
2.75
MAX
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
1
0
°
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0
°
MILLIMETERS
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
1
0
°
MAX
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PUBLICATION ORDERING INFORMATION
N. American Technical Support
: 800
282
9855 Toll Free
USA/Canada
Japan
: ON Semiconductor, Japan Customer Focus Center
2
9
1 Kamimeguro, Meguro
ku, Tokyo, Japan 153
0051
Phone
: 81
3
5773
3850
NTGS4111P/D
LITERATURE FULFILLMENT
:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082
1312 USA
Phone
: 480
829
7710 or 800
344
3860 Toll Free USA/Canada
Fax
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829
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344
3867
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For additional information, please contact your
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTGS4111PT1 | 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS4111PT1G | 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS4111PT2G | 功能描述:MOSFET PFET 4.7A 30V TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS4141N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 |
| NTGS4141NT1 | 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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