參數(shù)資料
型號： NTGS4111P
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 30V, 4.7A, Single P Channel, TSOP6(30V, 4.7A功率MOSFET)
中文描述： 30V的功率MOSFET，4.7A，單P通道，TSOP6（30V的，4.7A功率MOSFET的）
文件頁數(shù)： 2/5頁
文件大小： 146K
代理商： NTGS4111P
NTGS4111P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
/T
J
V
GS
= 0 V, I
D
=
250 A
30
V
Drain
to
Source Breakdown Voltage
Temperature Coefficient
17
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
=
24 V
T
J
= 25
°
C
T
J
= 125
°
C
1.0
A
100
Gate
to
Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20 V
±
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
=
250 A
1.0
3.0
V
Negative Threshold Temperature Coefficient
Drain
to
Source On Resistance
5.0
mV/
°
C
m
V
GS
=
10 V, I
D
=
3.7 A
V
GS
=
4.5 V, I
D
=
2.7 A
V
DS
=
10 V, I
D
=
3.7 A
38
60
68
110
Forward Transconductance
g
FS
6.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
15 V
750
pF
Output Capacitance
140
Reverse Transfer Capacitance
130
Total Gate Charge
V
GS
=
10 V, V
DD
=
15 V,
I
D
=
3.7 A
15.25
32
nC
Threshold Gate Charge
0.8
Gate
to
Source Charge
2.6
Gate
to
Drain Charge
3.4
SWITCHING CHARACTERISTICS, VGS =
10 V
(Note 4)
Turn
On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=
10 V, V
DD
=
15 V,
D
=
1.0 A, R
G
= 6.0
9.0
17
ns
Rise Time
9.0
18
Turn
Off Delay Time
38
85
Fall Time
22
45
SWITCHING CHARACTERISTICS, VGS =
4.5 V
(Note 4)
Turn
On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=
4.5 V, V
DD
=
15 V,
I
D
=
1.0 A, R
G
= 6.0
11
20
ns
Rise Time
15
28
Turn
Off Delay Time
28
56
Fall Time
22
50
DRAIN
SOURCE DIODE CHARACTERISTICS
Characteristic
Symbol
V
DS
Test Condition
Min
Typ
Max
Unit
V
Forward Diode Voltage
V
GS
= 0 V,
I
S
1.0 A
T
J
= 25
°
C
T
J
= 125
°
C
0.76
1.2
0.60
Reverse Recovery Time
t
RR
t
a
t
b
Q
RR
2%.
V
= 0
V
dI
S
/dt = 100 A/ s, I
S
=
1.0 A
24
60
ns
Charge Time
9.0
Discharge Time
15
Reverse Recovery Charge
12
nC
3. Pulse Test: pulse width
4. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
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