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參數(shù)資料
| 型號： | NTGD1100 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 8V,±3.3A,Load Switch with Level Shift,P Channel,TSOP6 Power MOSFET(8V,±3.3A,P溝道功率MOSFET) |
| 中文描述： | 8V的，± 3.3A，負載與電平轉換，P通道，TSOP6功率MOSFET開關（8V的，± 3.3A，P溝道功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | NTGD1100 |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 4
1
Publication Order Number:
NTGD1100L/D
NTGD1100L
Power MOSFET
8 V,
±
3.3 A, Load Switch with LevelShift,
PChannel, TSOP6
The NTGD1100L integrates a P and NChannel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
and high load currents are needed. The PChannel device is
specifically designed as a load switch using ON Semiconductor
stateofthearttrench technology. The NChannel, with an external
resistor (R1), functions as a levelshift to drive the PChannel. The
NChannel MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
applied to both V
IN
and V
ON/OFF
Features
Extremely Low R
DS(on)
Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
V
IN
Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
ESD Rating of 3000 V
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Input Voltage (V
DSS
, PCh)
ON/OFF Voltage (V
GS
, NCh)
Continuous Load Current
(Note 1)
V
IN
8.0
V
V
ON/OFF
I
L
8.0
V
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 85
°
C
tp
= 10 s
±
3.3
±
2.4
A
Power Dissipation
(Note 1)
Steady
State
P
D
0.83
W
0.43
Pulsed Load Current
I
LM
T
J
,
T
STG
±
10
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
I
S
1.0
A
ESD Rating, MILSTD883D HBM
(100 pF, 1.5 k )
ESD
3.0
kV
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
°
C/W
JunctiontoAmbient – Steady State (Note 1)
R
JA
R
JF
150
JunctiontoFoot – Steady State (Note 1)
50
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
2,3
5
6
SIMPLIFIED SCHEMATIC
TSOP6
CASE 318G
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
TZ M
3
D2
1
S1
S2
4
2
D2
G1
5
D1/G2
6
4
Q2
Q1
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8.0 V
55 m @ 2.5 V
40 m @ 4.5 V
R
DS(on)
TYP
±
3.3 A
I
D
MAX
V
(BR)DSS
80 m @ 1.8 V
Device
Package
Shipping
ORDERING INFORMATION
NTGD1100LT1
TSOP6
3000/Tape & Reel
NTGD1100LT1G
TSOP6
(PbFree)
3000/Tape & Reel
http://onsemi.com
1
TZ
M
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTGD1100L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTGD1100LT1 | 功能描述:MOSFET 8V +/-3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGD1100LT1G | 功能描述:MOSFET 8V +/-3.3A P-Channel w/Level Shift RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGD3122C | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTGD3133P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual |
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