參數(shù)資料
型號(hào)： NTGD1100
廠商： ON SEMICONDUCTOR
英文描述： 8V,±3.3A,Load Switch with Level Shift,P Channel,TSOP6 Power MOSFET(8V,±3.3A,P溝道功率MOSFET)
中文描述： 8V的，± 3.3A，負(fù)載與電平轉(zhuǎn)換，P通道，TSOP6功率MOSFET開(kāi)關(guān)（8V的，± 3.3A，P溝道功率MOSFET的）
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 70K
代理商： NTGD1100
NTGD1100L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Q2 DraintoSource Breakdown Voltage
V
IN
I
FL
V
GS2
= 0 V, I
D2
= 250 A
8.0
V
Forward Leakage Current
V
GS1
= 0 V,
V
DS2
= 8.0 V
T
J
= 25
°
C
T
J
= 125
°
C
1.0
A
10
Q1 GatetoSource Leakage Current
I
GSS
V
SD
V
DS1
= 0 V, V
GS1
=
±
8.0 V
I
S
= 1.0 A, V
GS1
= 0 V
±
100
nA
Q1 Diode Forward OnVoltage
0.7
1.0
V
ON CHARACTERISTICS
Voltage ON/OFF
V
ON/OFF
V
GS1
V
IN
R
DS(on)
1.5
8.0
V
Q1 Gate Threshold Voltage
V
GS1
= V
DS1
, I
D
= 50 A
V
GS2
= V
DS2
, I
D
= 250 A
V
ON/OFF
= 1.5 V,
I
L
= 1.0 A
0.6
1.2
V
Input Voltage
1.8
8.0
V
Q2 DraintoSource On Resistance
V
IN
= 4.5 V
V
IN
= 2.5 V
V
IN
= 1.8 V
40
55
m
55
70
80
140
Load Current
I
L
V
DROP
≤
0.2 V, V
IN
= 5.0 V,
V
ON/OFF
= 1.5 V
V
DROP
≤
0.2 V, V
IN
= 2.5 V,
V
ON/OFF
= 1.5 V
V
DROP
≤
0.2 V, V
IN
= 1.8 V,
V
ON/OFF
= 1.5 V
1.0
A
1.0
1.0
1
2,3
5
6
Figure 1. Load Switch Application
4
Q2
Q1
6
C1
C
O
C
I
R1
R2
R2
ON/OFF
V
IN
V
OUT
LOAD
GND
Components
Description
Values
R1
Pullup Resistor
Typical 10 k to 1.0 *
R2
Optional SlewRate Control
Typical 0 to 100 k *
C0
Output Capacitance
Usually < 1.0 F
C1
Optional InRush Current Control
Typical
≤
1000 pF
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