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參數(shù)資料
| 型號： | NTE471 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz |
| 中文描述： | 硅NPN晶體管輸出功率100W的訂單\u003d @ 30MHz頻段 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | NTE471 |
NTE338F
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a
power linear amplifier from 2 to 30MHz.
Features:
Specified 12.5V, 30MHz Characteristics:
Output Power = 20W (PEP)
Minimum Gain = 12dB
Efficiency = 45%
Intermodulation Distortion @ 20W (PEP):
IMD = –30dB Min
100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Withstand Current (t = 5s)
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
20V
40V
4V
4A
12A
80W
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.46W/
°
C
+200
°
C
–65
°
to +150
°
C
2.2
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
I
C
= 50mA, I
B
= 0
I
C
= 50mA, V
BE
= 0
I
C
= 50mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CE
= 12.5V, V
BE
= 0
20
–
–
V
40
–
–
V
Collector–Base Breakdown Voltage
40
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
5
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE472 | 制造商:NTE Electronics 功能描述:N-SI-RF DR & PO-1.8W |
| NTE473 | 制造商:NTE Electronics 功能描述:T-NPN SI-RF DR & PO 2.2W 制造商:NTE Electronics 功能描述:T-NPN-SI-RF DR & PO-2.2W 制造商:NTE Electronics 功能描述:TO-39 NPN RF PWR DRV 制造商:NTE Electronics 功能描述:RF TRANSISTOR, NPN, 40V, 500MHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:500MHz; Power Dissipation Pd:175W; DC Collector Current:1A; DC Current Gain hFE:10; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 40V 1A 3-Pin TO-39 |
| NTE474 | 制造商:NTE Electronics 功能描述: |
| NTE475 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output |
| NTE476 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output |
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