參數(shù)資料
型號: NTE338F
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor RF Power Amp, Driver
中文描述: 硅NPN晶體管射頻功率放大器,驅(qū)動程序
文件頁數(shù): 1/2頁
文件大小: 23K
代理商: NTE338F
NTE338F
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a
power linear amplifier from 2 to 30MHz.
Features:
Specified 12.5V, 30MHz Characteristics:
Output Power = 20W (PEP)
Minimum Gain = 12dB
Efficiency = 45%
Intermodulation Distortion @ 20W (PEP):
IMD = –30dB Min
100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Withstand Current (t = 5s)
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
20V
40V
4V
4A
12A
80W
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.46W/
°
C
+200
°
C
–65
°
to +150
°
C
2.2
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
I
C
= 50mA, I
B
= 0
I
C
= 50mA, V
BE
= 0
I
C
= 50mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CE
= 12.5V, V
BE
= 0
20
V
40
V
Collector–Base Breakdown Voltage
40
V
Emitter–Base Breakdown Voltage
4
V
Collector Cutoff Current
5
mA
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