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參數(shù)資料
| 型號： | NTE346 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Transistor |
| 中文描述： | 硅NPN晶體管射頻功率晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | NTE346 |
NTE346
Silicon NPN Transistor
RF Power Transistor
Description:
The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency mul-
tiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
or pre–driver stages, in VHF and UHF equipment.
Features:
Current–Gain–Bandwidth Product–f
T
= 500MHz (Min) @ I
C
= 50mAdc
Power Gain–G
pe
= 10dB (Min) @ V
CE
=12Vdc
1 Watt Minimum Power Output @ f = 175MHz
Multiple–Emitter Construction for Excellent High–Frequency Performance
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current–Continuous, I
C
Base Current–Continuous. I
B
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate above 25
°
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Storage Temperature Range, T
stg
20V
40V
2.0V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400mA
400mA
1.0W
5.71mW/
°
C
3.5Wa
20mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
V
CER(sus)
I
CEO
I
CEV
I
C
= 5mA, I
B
= 0
I
C
= 5mA, R
BE
= 10
V
CE
= 12V, I
B
= 0
V
CE
= 40V, V
BE
= –1.5V
V
CE
= 12V, V
BE
= –1.5V, T
C
= +150
°
C
V
EB
= 2V, I
C
= 0
20
–
–
V
40
–
–
V
Collector Cutoff Current
–
–
0.02
mA
–
–
0.1
mA
–
–
5.0
mA
Emitter Cutoff Current
I
EBO
–
–
0.1
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE347 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 600MA I(C) | SOT-122 |
| NTE3470 | 制造商:NTE Electronics 功能描述:INTEGRATED CIRCUIT FLOPPY DISK READ AMPLIFIER SYSTEM 18-LEAD DIP 制造商:NTE Electronics 功能描述:IC, FLOPPY DISK READ AMP SYSTEM, DIP-18; IC Function:Floppy Disk Read Amplifier System; Brief Features:Improved (Positive) Gain TC and Tolerance, Improved Input Common Mode; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V |
| NTE348 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 1A 4-Pin Case T-72H |
| NTE349 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 2A 4-Pin Case T-72H |
| NTE350 | 制造商:NTE Electronics 功能描述:T-NPN-SI-RF PO-15W 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 2.5A 4-Pin Case T-72H |
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