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參數(shù)資料
| 型號： | NTE348 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Amp, Driver |
| 中文描述： | 硅NPN晶體管射頻功率放大器，驅(qū)動程序 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE348 |
NTE348
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in military and industrial equipment to
300MHz.
Features:
Specified 12.5V, 175MHz Characteristics:
Output Power = 4W
Minimum Gain = 12dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Emitter Voltage, V
CES
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (Note 1, T
C
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
18V
36V
4V
1A
12W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
68.5mW/
°
C
–65
°
to +200
°
C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
I
C
= 10mA, I
B
= 0
I
C
= 5mA, V
BE
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 15V, I
E
= 0
V
CE
= 15V, V
BE
= 0, T
C
= +55
°
C
18
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
0.25
mA
–
–
5
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 250mA, V
CE
= 5V
5
–
–
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| NTE349 | Silicon NPN Transistor RF Power Amp, Driver |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE349 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 2A 4-Pin Case T-72H |
| NTE350 | 制造商:NTE Electronics 功能描述:T-NPN-SI-RF PO-15W 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 2.5A 4-Pin Case T-72H |
| NTE350F | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 36V IC=2.5A PO=15W 130-175MHZ RF POWER AMP |
| NTE351 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 5A 4-Pin Case T-72H |
| NTE352 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 20A 6-Pin |
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