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參數(shù)資料
| 型號： | NTE352 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount) |
| 中文描述： | 硅晶體管互補(bǔ)數(shù)字瓦特/ 2內(nèi)置偏置47k電阻（表面貼裝） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE352 |
NTE352
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in commercial and industrial FM equipment
to 175MHz.
Features:
Specified 12.5V, 175MHz Characteristics:
Output Power = 75W
Minimum Gain = 7.0dB
Efficiency = 55%
Characterized with Series Equivalent large–Signal Impedance Parameters
Internal Matching Network Optimized for Minimum Gain Frequency Slope Response over the
Range 136 to 175MHz
Load Mismatch capability at Rated P
OUT
and Supply Voltage
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current (Peak), I
C
Total Device Dissipation (Note 1, T
C
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
Thermal Resuistance, Junction–to–Case (Note 2), R
thJC
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Note 2. Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.
18V
36V
4V
20A
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.43mW/
°
C
–65
°
to +150
°
C
0.7
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
C
= 100mA, I
B
= 0
I
C
= 50mA, V
BE
= 0
I
E
= 10mA, I
C
= 0
18
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
ON Characteristics
DC Current Gain
h
FE
I
C
= 5A, V
CE
= 5V
10
75
150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE353 | Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz |
| NTE354 | Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz |
| NTE355 | Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz |
| NTE361 | Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz |
| NTE363 | Silicon NPN Transistor RF Power Amp, PO = 4W |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE353 | 制造商:NTE Electronics 功能描述:T-PNP-SI-RF PO-4W 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 18V 1A 4-Pin |
| NTE354 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz |
| NTE355 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz |
| NTE357 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 35V 1A 4-Pin |
| NTE358C | 制造商:NTE Electronics 功能描述:CRYSTAL-3.579545 MHZ |
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