- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363694 > NTE363 (NTE Electronics, Inc.) Silicon NPN Transistor RF Power Amp, PO = 4W PDF資料下載
參數(shù)資料
| 型號(hào)： | NTE363 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Amp, PO = 4W |
| 中文描述： | 硅NPN晶體管射頻功率放大器，寶\u003d 4瓦 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | NTE363 |
NTE363
Silicon NPN Transistor
RF Power Amp, P
O
= 4W
Description:
The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF commu-
nications.
Features:
Designed for UHF Military and Commercial Equipment
4W (Min) with Greater than 8dB Gain
Withstands Infinite VSWR Under Operating Conditions
Low Inductance Stripline Package
Emitter Stabilized
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Maximum Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
T
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
36V
16V
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800mA
15W
+200
°
C
–65
°
to +200
°
C
11.6
°
C/W
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emiter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
I
C
= 100mA, I
B
= 0, Note 1
I
C
= 100mA, I
BE
= 0, Note 1
I
E
= 2mA, I
C
= 0
V
CB
= 5V, I
E
= 0
V
CE
= 5V, I
C
= 200mA
16
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
1.0
mA
DC Current Gain
20
–
–
Note 1. Pulsed throught 25MH inductor.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE365 | Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz |
| NTE396 | Silicon NPN Transistor Power Amplifier & High Speed Switch (Compl to NTE397) |
| NTE366 | Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz |
| NTE367 | Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz |
| NTE368 | Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE364 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 16V 2A 4-Pin |
| NTE365 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 16V 3A 3-Pin |
| NTE366 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 16V 4A 3-Pin |
| NTE367 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 36V IC=8A PO=45W 407-512 MHZ RF POWER OUTPUT |
| NTE368 | 制造商:NTE Electronics 功能描述:T-NPN-SI-RF PO-60W 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 16V 11A 3-Pin |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。