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參數(shù)資料
| 型號： | NTE367 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz |
| 中文描述： | 硅NPN晶體管射頻功率放大器保\u003d 45瓦@ 512MHz |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | NTE367 |
NTE367
Silicon NPN Transistor
RF Power Amplifier
P
O
= 45W @ 512MHz
Description:
The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF
large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.
Features:
Specified 12.5V, 470MHz Characteristics:
Output Power: 45W
Minimum Gain: 4.8dB
Efficiency: 55%
Characterized with Series Equivalent Large–Signal Impedance Parameters
Built–In Matching Network for Broadband Operation
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and
50% Overdrive
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
Thermal Resistance, Junction to Case, R
Θ
JC
16V
36V
4V
9A
117W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
670mW/
°
C
–65
°
to +150
°
C
1.5
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
I
C
= 20mA, V
BE
= 0
V
(BR)EBO
I
E
= 5mA, I
C
– 0
I
CES
V
CE
= 15V, V
BE
= 0, T
C
= +25
°
C
I
C
= 20mA, I
B
= 0
16
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
10
mA
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