參數(shù)資料
型號: NTE367
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz
中文描述: 硅NPN晶體管射頻功率放大器保\u003d 45瓦@ 512MHz
文件頁數(shù): 2/2頁
文件大?。?/td> 22K
代理商: NTE367
Electrical Characteristics (Cont’d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
Output Capacitance
Functional Tests
Common
Emitter Amplifier Power Gain
Collector Efficiency
Input Power
h
FE
I
C
= 4A, V
CE
= 5V
20
70
150
C
ob
V
CB
= 12.5V, I
E
= 0, f = 1MHz
90
125
pF
G
pe
η
P
in
V
CC
= 12.5V, P
O
= 45W,
I
C
(Max) = 5.8A, f = 470MHz
4.8
55
5.4
60
13
15
dB
%
W
V
CC
= 12.5V, P
O
= 45W,
f = 470MHz
V
CC
= 16V, f = 470MHz,
VSWR = 20:1, All Phase Angles,
Note 1, Note 2
V
CC
= 12.5V, P
O
= 45W,
f = 470MHz
Load Mismatch Stress
No Degradation in
Output Power
Series Equivalent Input Impedance
Series Equivalent Output Impedance
Z
in
Z
OL
1.4+j4.0
1.2+j2.8
Note 1. P
in
= 150% of Drive Requirement for 45W output @ 12.5V.
Note 2.
= Mismatch stress factor
the electrical criterion established to verify the device resistance
to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.
.205 (5.18)
.215 (5.48)
.122 (3.1) Dia
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.160 (4.06)
.270
(6.85)
.405
(10.3)
Min
.725 (18.43)
.975 (24.78)
E
B
C
E
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