參數(shù)資料
型號: NTE346
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor RF Power Transistor
中文描述: 硅NPN晶體管射頻功率晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 23K
代理商: NTE346
Electrical Characteristics (Cont’d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
h
FE
I
C
= 100mA, V
CE
= 5V
I
C
= 360mA, V
CE
= 5V
I
C
= 100mA, I
B
= 20mA
10
200
5
Collector
Emitter Saturation Voltage
V
CE(sat)
0.5
V
Dynamic Characteristics
Current
Gain Bandwidth Product
f
T
I
C
= 50mA, V
CE
= 15V, f = 1MHz
V
CB
= 12V, I
E
= 0, f = 1MHz
500
MHz
Output Capacitance
C
ob
4
pF
Functional Test
Power Input
P
in
η
G
pe
P
out
= 1W, Z
S
= 50
, V
CC
= 12V,
f = 175MHz
100
W
Collector Efficiency
50
%
Common
Emitter Amplifier Power Gain
P
in
= 100mW, Z
S
= 50
, V
CC
= 12V,
f = 175MHz
10
dB
45
°
.031 (.793)
.018 (0.45) Dia
E
B
C/Case
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260 (6.6)
Max
.500 (12.7)
Min
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