參數(shù)資料
型號(hào): NTE343
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz)
中文描述: 硅NPN晶體管射頻輸出功率(以PO \u003d 14W,175MHz時(shí))
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 21K
代理商: NTE343
NTE343
Silicon NPN Transistor
RF Power Output
(P
O
= 14W, 175MHz)
Description:
The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF
band mobile radio applications.
Features:
High Power Gain: G
pe
7.5dB (V
CC
= 13.5V, P
O
= 14W, f = 175MHz)
Ability to Withstand more than 20:1 VSWR Load when Operated at:
V
CC
= 15.2V, P
O
= 18W, f = 175MHz
Application:
10 to 14 Watt Output Power Amplifiers in VHF Band Mobile Radio Applications
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (R
BE
=
), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V
17V
4V
3.5A
1.5W
25W
+175
°
C
–55
°
to +175
°
C
100
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
°
C/W
相關(guān)PDF資料
PDF描述
NTE345 Silicon NPN Transistor RF Power Amp, Driver
NTE346 Silicon NPN Transistor RF Power Transistor
NTE3470 Integrated Circuit Floppy Disk Read Amplifier System
NTE348 Silicon NPN Transistor RF Power Amp, Driver
NTE349 Silicon NPN Transistor RF Power Amp, Driver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE344 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 17V V(BR)CEO | 7A I(C) | RFMOD
NTE345 制造商:NTE Electronics 功能描述:T-NPN-SI-RF PO-30W 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 36V IC=4A PO=30W 130-175MHZ RF POWER OUTPUT FOR MARINE RA
NTE346 制造商:NTE Electronics 功能描述:RF POWER TRANS NPN 20V 500MHZ 制造商:NTE Electronics 功能描述:RF POWER TRANS, NPN 20V 500MHZ TO39 制造商:NTE Electronics 功能描述:T-NPN-SI-RF DR & PREDR 制造商:NTE Electronics 功能描述:RF POWER TRANS, NPN 20V 500MHZ TO39; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:500MHz; Power Dissipation Pd:1W; DC Collector Current:400mA; DC Current Gain hFE:10; No. of Pins:3 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 20V 0.4A 3-Pin TO-39
NTE347 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 600MA I(C) | SOT-122
NTE3470 制造商:NTE Electronics 功能描述:INTEGRATED CIRCUIT FLOPPY DISK READ AMPLIFIER SYSTEM 18-LEAD DIP 制造商:NTE Electronics 功能描述:IC, FLOPPY DISK READ AMP SYSTEM, DIP-18; IC Function:Floppy Disk Read Amplifier System; Brief Features:Improved (Positive) Gain TC and Tolerance, Improved Input Common Mode; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V