參數(shù)資料
型號： NTE345
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor RF Power Amp, Driver
中文描述： 硅NPN晶體管射頻功率放大器，驅(qū)動程序
文件頁數(shù)： 1/2頁
文件大?。?/td> 21K
代理商： NTE345
NTE345
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE345 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V
large–signal amplifier applications in industrial and commercial FM equipment operating to 175MHz.
This device is ideally suited for marine radio applications.
Features:
Specified 13.6V, 160MHz Characteristics:
Output Power = 30W
Minimum Gain = 9dB
Efficiency = 60%
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
18V
36V
4V
5A
65W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.37W/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
C
= 100mA, I
B
= 0
I
C
= 15mA, I
E
= 0
I
E
= 5mA, I
C
= 0
18
–
–
V
Collector–Base Breakdown Voltage
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
ON Characteristics
DC Current Gain
h
FE
I
C
= 1A, V
CE
= 5V
5
–
–
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 15V, I
E
= 0, f = 0.1 to 1MHz
–
110
130
pF
Functional Tests
(V
CC
= 13.6V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
G
PE
P
out
= 30W, f = 160MHz
9
10
–
dB
Collector Efficiency
η
P
out
= 30W, f = 160MHz
60
–
–
%
相關(guān)PDF資料
PDF描述
NTE346 Silicon NPN Transistor RF Power Transistor
NTE3470 Integrated Circuit Floppy Disk Read Amplifier System
NTE348 Silicon NPN Transistor RF Power Amp, Driver
NTE349 Silicon NPN Transistor RF Power Amp, Driver
NTE350 Silicon NPN Transistor RF Power Amp, Driver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE346 制造商:NTE Electronics 功能描述:RF POWER TRANS NPN 20V 500MHZ 制造商:NTE Electronics 功能描述:RF POWER TRANS, NPN 20V 500MHZ TO39 制造商:NTE Electronics 功能描述:T-NPN-SI-RF DR & PREDR 制造商:NTE Electronics 功能描述:RF POWER TRANS, NPN 20V 500MHZ TO39; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:500MHz; Power Dissipation Pd:1W; DC Collector Current:400mA; DC Current Gain hFE:10; No. of Pins:3 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 20V 0.4A 3-Pin TO-39
NTE347 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 600MA I(C) | SOT-122
NTE3470 制造商:NTE Electronics 功能描述:INTEGRATED CIRCUIT FLOPPY DISK READ AMPLIFIER SYSTEM 18-LEAD DIP 制造商:NTE Electronics 功能描述:IC, FLOPPY DISK READ AMP SYSTEM, DIP-18; IC Function:Floppy Disk Read Amplifier System; Brief Features:Improved (Positive) Gain TC and Tolerance, Improved Input Common Mode; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V
NTE348 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 1A 4-Pin Case T-72H
NTE349 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 2A 4-Pin Case T-72H
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*