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參數(shù)資料
| 型號(hào)： | NTE2408 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2409) |
| 中文描述： | 硅NPN晶體管通用放大器，表面貼裝（并發(fā)癥的NTE2409） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE2408 |
NTE2408
Silicon NPN Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2409)
Description:
The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CES
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Emitter Current, I
EM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Base Current, I
BM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +60
°
C, Note 1), P
tot
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Tab, R
thJT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Tab–to–Soldering Points, R
thTS
Thermal Resistance, Soldering Points–to–Ambient (Note 1), R
thSA
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
80V
80V
65V
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA
200mA
200mA
200mA
200mW
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +150
°
C
60K/W
280K/W
90K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
Test Conditions
Min
–
–
580
–
–
–
Typ
–
–
660
–
90
200
Max
15
5
700
770
250
600
Unit
nA
μ
A
mV
mV
mV
mV
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= +150
°
C
V
CE
= 5V, I
C
= 2mA, Note 2
V
CE
= 5V, I
C
= 10mA, Note 2
I
C
= 10mA, I
B
= 0.5mA, Note 3
I
C
= 100mA, I
B
= 5mA, Note 3
Base–Emitter Voltage
V
BE
Collector–Emitter Saturation Voltage
V
CE(sat)
Note 2. V
BE
decreases by about 2mV/K with increasing temperature.
Note 3. V
BE(sat)
decreases by about 1.7mV with increasing temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2408 (PKG OF 2) | 制造商:NTE Electronics 功能描述:SOT-23 NPN DRVR/OUT PKG OF 2 |
| NTE2409 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 80V IC=0.1A SOT-23 CASE LOW NOISE DRIVER OUTPUT SURFACE M 制造商:NTE Electronics 功能描述:T-PNP-SI LO NOISE AMP 制造商:NTE Electronics 功能描述:SOT-23 PNP LO-NO DRV PKG OF 2 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -15V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:200mW; DC Collector Current:250mA; DC Current Gain hFE:50; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 |
| NTE241 | 制造商:NTE Electronics 功能描述:T-NPN- SI-AF POSW 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220 |
| NTE2410 | 制造商:NTE Electronics 功能描述:T-NPN-SI HI VLTG AMP 制造商:NTE Electronics 功能描述:SOT-23 NPN HV AMP/DR PKG OF 2 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 160V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80; Operating Temperature Min:-55C; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 160V 0.6A 3-Pin SOT-23 |
| NTE2411 | 制造商:NTE Electronics 功能描述:T-PNP-SI HI VLTG AMP 制造商:NTE Electronics 功能描述:SOT-23 PNP HV AMP 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 150V 0.5A 3-Pin SOT-23 |
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