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參數(shù)資料
| 型號(hào)： | NTE2413 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon PNP Transistor General Purpose, High Voltage Amp, (Compl to NTE2412) |
| 中文描述： | 硅PNP晶體管通用，高電壓放大器，（并發(fā)癥的NTE2412） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE2413 |
NTE2413
Silicon PNP Transistor
General Purpose, High Voltage Amp,
(Compl to NTE2412)
Description:
The NTE2413 is a silicon PNP transistor in an SOT–23 type surface mount package designed for use
primarily in telephone and professional communication equipment.
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage (R
BE
= 2.7k
), V
CER
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
≤
+35
°
C, Note 1), P
tot
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Tab, R
thJT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Tab–to–Soldering Points, R
thTS
Thermal Resistance, Soldering Points–to–Ambient (Note 1), R
thSA
Note 1. Mounted on a ceramic substrate 2.5cm
2
x 0.7mm.
300V
300V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA
100mA
310mW
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +150
°
C
50K/W
260K/W
60K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
I
CER
Test Conditions
V
CB
= 200V, I
E
= 0
V
CE
= 250V, R
BE
= 2.7k
V
CE
= 200V, R
BE
= 2.7k
,
T
J
= +150
°
C
I
C
= 30mA, I
B
= 5mA
V
CE
= 20V, I
C
= 25mA
V
CE
= 10V, I
E
= 10mA,
f = 35MHz
V
CE
= 30V, I
C
= 0, f = 1MHz
Min
–
–
–
Typ
–
–
–
Max
10
50
10
Unit
nA
nA
μ
A
Collector–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
V
CE(sat)
h
FE
f
T
–
–
–
–
0.8
–
–
V
50
60
MHz
Capacitance
C
re
–
–
1.6
pF
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參數(shù)描述 |
|---|---|
| NTE2414 | 制造商:NTE Electronics 功能描述:T-NPN-SI WITH 10K RES |
| NTE2415 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 50V IC=0.1A SOT-23 CASE DIGITAL TRANSISTOR W/2 10K RESIST 制造商:NTE Electronics 功能描述:T-PNP-SI WITH 10K RES 制造商:NTE Electronics 功能描述:SOT-23 PNP DIGITAL |
| NTE2416 | 制造商:NTE Electronics 功能描述:T-NPN-SI WITH 22K RES 制造商:NTE Electronics 功能描述:SOT-23 NPN DIGITAL 制造商:NTE Electronics 功能描述:Trans Digital BJT NPN 50V 200mA 3-Pin SOT-23 |
| NTE2417 | 制造商:NTE Electronics 功能描述:T-PNP-SI WITH 22K RES 制造商:NTE Electronics 功能描述:SOT-23 PNP DIGITAL |
| NTE2418 | 制造商:NTE Electronics 功能描述:Trans Digital BJT NPN 50V 200mA 3-Pin SOT-23 |
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