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參數(shù)資料
| 型號(hào)： | NTE2414 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Digital w/2 Built-In Bias 10k Resistors (Surface Mount) |
| 中文描述： | 硅晶體管互補(bǔ)數(shù)字瓦特/ 2內(nèi)置偏置10K電阻（表面貼裝） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | NTE2414 |
NTE2414 (NPN) & NTE2415 (PNP)
Silicon Complementary Transistors
Digital
w
/2 Built–In Bias 10k Resistors
(Surface Mount)
Features:
Built–In Bias Resistors
Small SOT–23 Surface Mount Package
Applications:
Switching Circuits
Inverters
Interface Circuits
Driver
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V
50V
10V
100mA
200mA
200mW
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
(BR)CBO
I
C
= 10
μ
A, I
E
= 0
V
(BR)CBO
I
C
= 100
μ
A, R
BE
=
∞
V
CE(sat)
I
C
= 10mA, I
B
= 0.5mA
f
T
V
CE
= 10V, I
C
= 5mA
Test Conditions
V
CB
= 40V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
Min
–
–
170
50
50
50
–
Typ
–
–
250
–
–
–
0.1
Max
0.1
0.5
330
–
–
–
0.3
Unit
μ
A
μ
A
μ
A
Emitter Cutoff Current
DC Current Gain
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector–Emitter Saturation Voltage
Current Gain–Bandwidth Product
NTE2414
NTE2415
V
V
V
–
–
250
200
–
–
MHz
MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2415 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 50V IC=0.1A SOT-23 CASE DIGITAL TRANSISTOR W/2 10K RESIST 制造商:NTE Electronics 功能描述:T-PNP-SI WITH 10K RES 制造商:NTE Electronics 功能描述:SOT-23 PNP DIGITAL |
| NTE2416 | 制造商:NTE Electronics 功能描述:T-NPN-SI WITH 22K RES 制造商:NTE Electronics 功能描述:SOT-23 NPN DIGITAL 制造商:NTE Electronics 功能描述:Trans Digital BJT NPN 50V 200mA 3-Pin SOT-23 |
| NTE2417 | 制造商:NTE Electronics 功能描述:T-PNP-SI WITH 22K RES 制造商:NTE Electronics 功能描述:SOT-23 PNP DIGITAL |
| NTE2418 | 制造商:NTE Electronics 功能描述:Trans Digital BJT NPN 50V 200mA 3-Pin SOT-23 |
| NTE2419 | 制造商:NTE Electronics 功能描述:T-PNP-SI WITH 47K RES 制造商:NTE Electronics 功能描述:SOT-23 PNP DIGITAL 制造商:NTE Electronics 功能描述:Trans Digital BJT PNP 50V 200mA 3-Pin SOT-23 |
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