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參數(shù)資料
| 型號： | NTE241 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Audio Power Amplifier, Switch |
| 中文描述： | 硅互補晶體管音頻功率放大器，開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE241 |
NTE241 (NPN) & NTE242 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package
designed for use in power amplifier and switching circuits.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Base Current, I
B
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
Θ
JC
80V
80V
5V
4A
1A
60W
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320mW/
°
C
–65
°
to +150
°
C
–65
°
to +150
°
C
3.12
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
I
CEO
V
CE
= 80V, I
B
= 0
I
CEX
V
CE
= 80V, V
EB(off)
= 1.5V
V
CE
= 80V, V
EB(off)
= 1.5V, T
C
= +125
°
C
I
CBO
V
CB
= 80V, I
E
= 0
I
EBO
V
BE
= 5V, I
C
= 0
80
–
–
V
Collector Cutoff Current
–
–
1.0
mA
–
–
0.1
mA
–
–
2.0
mA
–
–
0.1
mA
Emitter Cutoff Current
–
–
1.0
mA
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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|---|---|
| NTE2426 | Quad Differential Comparator 14-CDIP -55 to 125 |
| NTE2430 | Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431) |
| NTE2431 | Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430) |
| NTE243 | Silicon Complementary Transistors Darlington Power Amplifier |
| NTE245 | Silicon Complementary Transistors Darlington Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2410 | 制造商:NTE Electronics 功能描述:T-NPN-SI HI VLTG AMP 制造商:NTE Electronics 功能描述:SOT-23 NPN HV AMP/DR PKG OF 2 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 160V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80; Operating Temperature Min:-55C; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 160V 0.6A 3-Pin SOT-23 |
| NTE2411 | 制造商:NTE Electronics 功能描述:T-PNP-SI HI VLTG AMP 制造商:NTE Electronics 功能描述:SOT-23 PNP HV AMP 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 150V 0.5A 3-Pin SOT-23 |
| NTE2412 | 制造商:NTE Electronics 功能描述:T-NPN-SI HI VLTG AMP 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 300V 0.1A 3-Pin SOT-23 |
| NTE2413 | 制造商:NTE Electronics 功能描述:T-PNP-SI HI VLTG AMP 制造商:NTE Electronics 功能描述:SOT-23 PNP GP HI-V |
| NTE2414 | 制造商:NTE Electronics 功能描述:T-NPN-SI WITH 10K RES |
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