參數(shù)資料
型號： NTE2431
廠商： NTE Electronics, Inc.
英文描述： Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430)
中文描述： 硅PNP晶體管高壓放大器/開關(guān)（并發(fā)癥的NTE2430）
文件頁數(shù)： 1/2頁
文件大小： 19K
代理商： NTE2431
NTE2431
Silicon PNP Transistor
High Voltage Amp/Switch
(Compl to NTE2430)
Description:
The NTE2431 is a silicon PNP transistor in a SOT–89 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), V
CBO
Collector–Emitter Voltage (Open Base), V
CEO
Emitter–Base Voltage (Open Collector), V
EBO
DC Collector Current, I
C
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
≤
+25
°
C, Note 1), P
tot
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
Thermal Resistance, Junction–to–Tab, R
thJTAB
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
350V
300V
6V
1A
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150
°
C
–65
°
to +150
°
C
125K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10K/W
Electrical Characteristics:
(T
J
= +25
°
C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
μ
A
V
Collector Cutoff Current
I
CBO
I
CEO
I
EBO
V
(BR)CEO
V
CE(sat)
h
FE
C
c
f
T
V
CB
= 280V, I
E
= 0
V
CE
= 250V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 50mA, I
B
= 0, L = 25mH
I
C
= 50mA, I
B
= 5mA
V
CE
= 10V, I
C
= 50mA
I
E
= I
e
= 0, V
CB
= 10, f = 1MHz
V
CE
= 10V, I
C
= 10mA, f = 30MHz
–
–
1
–
–
50
Emitter Cutoff Current
–
–
20
Collector–Emitter Breakdown Voltage
300
–
–
Collector–Emitter Saturation Voltage
–
–
2
V
DC Current Gain
30
–
120
Collector Capacitance
–
–
15
pF
Transitional Frequency
15
–
–
MHz
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