參數(shù)資料
型號(hào)： NTE243
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors Darlington Power Amplifier
中文描述： 硅達(dá)林頓晶體管互補(bǔ)功率放大器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 26K
代理商： NTE243
NTE243 (NPN) & NTE244 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
High DC Current Gain: h
FE
= 3000 Typ @ I
C
= 4A
Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 80V Min @ 100mA
Low Collector–Emitter Saturation Voltage:
V
CE(sat)
=
2V Max @ I
C
= 4A
=
3V Max @ I
C
= 8A
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
80V
80V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8A
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120mA
100W
0.571W/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
1.78
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter SustainingVoltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
I
CEO
V
CE
= 40V, I
E
= 0
I
CEX
V
CE
= 80V, V
BE(off)
= 1.5V
V
CE
= 80V, V
BE(off)
= 1.5V, T
A
= +150
°
C
I
EBO
V
BE
= 5V, I
C
= 0
80
–
–
V
Collector Cutoff Current
–
–
0.5
mA
–
–
0.5
mA
–
–
5.0
mA
Emitter Cutoff Current
–
–
2.0
mA
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%
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