參數(shù)資料
型號(hào)： NTE243
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors Darlington Power Amplifier
中文描述： 硅達(dá)林頓晶體管互補(bǔ)功率放大器
文件頁數(shù)： 2/2頁
文件大?。?/td> 26K
代理商： NTE243
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
(Note 1)
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4A, I
B
= 16mA
I
C
= 8A, I
B
= 80mA
I
C
= 8A, I
B
= 80mA
V
CE
= 3V, I
C
= 4A
750
–
18000
100
–
–
Collector
–
Emitter Saturation Voltage
V
CE(sat)
–
–
2.0
V
–
–
3.0
V
Base
–
Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
–
–
4.0
V
Base
–
Emitter ON Voltage
–
–
2.8
V
Dynamic Characteristics
Small
–
Signal Current Gain
h
fe
|h
fe
|
V
CE
= 3V, I
C
= 3A, f = 1kHz
V
CE
= 3V, I
C
= 3A, f = 1MHz
300
–
–
Magnitude of Common Emitter
Small
–
Signal Short
–
Circuit
Forward Current Transfer Ratio
4.0
–
–
MHz
Output Capacitance
NTE243
NTE244
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
–
–
–
–
200
300
pF
pF
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%
NTE243
NTE244
B
C
E
B
C
E
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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