參數(shù)資料
型號: NTE245
廠商: NTE Electronics, Inc.
英文描述: Silicon Complementary Transistors Darlington Power Amplifier
中文描述: 硅達林頓晶體管互補功率放大器
文件頁數(shù): 1/2頁
文件大?。?/td> 25K
代理商: NTE245
NTE245 (NPN) & NTE246 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in general purpose amplifier applications.
Features:
High DC Current Gain: h
FE
= 4000 Typ @ I
C
= 5A
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Base Current, I
B
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
80V
80V
5V
10A
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200mA
150W
0.857W/
°
C
–55
°
to +200
°
C
–55
°
to +200
°
C
1.17
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter SustainingVoltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
I
CEO
V
CE
= 40V, I
B
= 0
I
CER
V
EB
= 80V, R
BE
= 1k
V
EB
= 80V, R
BE
= 1k
, T
C
= +150
°
C
I
EBO
V
BE
= 5V, I
C
= 0
80
V
Collector–Emitter Leakage Current
1.0
mA
1.0
mA
5.0
mA
Emitter Cutoff Current
2.0
mA
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%
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