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參數(shù)資料
| 型號： | NTE2503 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Gain Switch |
| 中文描述： | 硅NPN晶體管高增益開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE2503 |
NTE2503
Silicon NPN Transistor
High Gain Switch
Features:
High DC Current Gain
High Current Capacity
Low Collector–Emitter Saturation Voltage
High Emitter–Base Voltage
Applications:
AF Amplifier
Various Driver
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V
30V
15V
700mA
1.5A
600mW
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 20V, I
E
= 0
V
EB
= 10V, I
C
= 0
I
C
= 50mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 50mA, V
CE
= 10V
V
CB
= 10V, f = 1MHz
Min
–
–
800
600
–
–
Typ
–
–
1500 3200
–
270
9
Max
0.1
0.1
Unit
μ
A
μ
A
–
–
–
Current Gain–Bandwidth Product
Output Capacitance
f
T
MHz
pF
C
ob
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