參數(shù)資料
型號(hào)： NTE2506
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor High Frequency Video Driver
中文描述： 硅NPN晶體管高頻視頻驅(qū)動(dòng)程序
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 21K
代理商： NTE2506
NTE2506
Silicon NPN Transistor
High Frequency Video Driver
Description:
The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the
cascode stage of the driver for high–resolution color graphics monitors.
Features:
High Breakdown Voltage
Low Output Capacitance
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Collector–Emitter Voltage (R
BE
= 100
), V
CER
Emitter–Base Voltage, V
EBO
DC Collector Current, I
C
Total Power Dissipation (T
S
≤
+85
°
C, Note 1), P
tot
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Soldering Point (T
S
≤
+85
°
C, Note 1), R
thJS
Note 1. T
S
is the temperature at the soldering point of the collector lead.
115V
95V
110V
3V
400mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5W
+175
°
C
–65
°
to +150
°
C
. . . . . . . . . .
18K/W
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
I
CBO
h
FE
f
T
I
C
= 0.1mA
I
C
= 10mA
I
C
= 10mA, R
BE
= 100
I
E
= 0.1mA
I
B
= 0, V
CE
= 50V
I
E
= 0, V
CB
= 50V
I
C
= 100mA, V
CE
= 10V, T
A
= +25
°
C
I
C
= 100mA, V
CE
= 10V, f = 100MHz,
T
A
= +25
°
C
I
C
= 0, V
CB
= 10V, f = 1MHz, T
A
= +25
°
C
I
E
= i
e
= 0, V
CB
= 10V f = 1MHz
115
–
–
V
Collector–Emitter Breakdown Voltage
95
–
–
V
110
–
–
V
Emitter–Base Breakdown Voltage
3
–
–
V
μ
A
μ
A
Collector Cutoff Current
–
–
100
–
–
20
DC Current Gain
20
35
–
Transition Frequency
0.8
1.2
–
GHz
Collector–Base Capacitance
C
cb
C
c
–
2.0
–
pF
Collector Capacitance
–
3.5
–
pF
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